Optical properties of coherent InAs/InGaAs quantum dash-in-a-well for strong 2 μm emission enabled by ripening process

Chu, Rafael Jumar; Ahn, Dae‐Hwan; Ryu, Guen-Hwan; Choi, Won Jun; Jung, Daehwan

doi:10.1016/j.jallcom.2020.157783

Cited by 5 publications

(5 citation statements)

References 41 publications

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“…This angle is roughly conserved during InAs deposition above 3.5 ML, throughout the entire growth interruption where shape evolution is expected, and regardless of the punctuation strategy (CG to PG-3). Previously, we have also shown that small and large Qdashes have roughly the same aspect ratios [ 16 ]. This aspect ratio conservation points to the stability and energetic favorability of the {114} facet [ 30 ].…”

Section: Resultsmentioning

confidence: 78%

“…The increasing Qdash height raises the question of strain relaxation and dislocation formation. In our prior experiments, PL intensity starts to decrease at an InAs nominal thickness of 8 ML [ 16 ], which we interpreted as the onset of dislocation formation. In the present study, the Qdashes are much taller than the 8ML Qdashes, and dislocations might have started to form.…”

Section: Resultsmentioning

confidence: 91%

“…Along , chevron tails emerge, which indicates faceting of the Qdash sidewalls. Previous AFM and TEM studies on InAs QDs and Qdashes have confirmed a remarkable link between the sidewall facets and the angle of the chevron tail with respect to the [001] direction [ 16 , 28 , 29 ]. In our RHEED images, the angle is ~ 20° angle, which corresponds to the {114} family of planes.…”

Section: Resultsmentioning

confidence: 99%

“…Thus, the InAs Qdash/InP system has been heavily studied for the technologically important C-band (1.55 μm) [ 13 – 15 ]. Placing the InAs Qdashes between InGaAs QWs (QDaWell) further weakens the quantum confinement effect, which finally enables 2-μm emission [ 16 ]. This, however, entails growing large nanostructures near or beyond their elastic limit, which could then relax and generate dislocations, ultimately lowering the quantum efficiency of the device.…”

Section: Introductionmentioning

confidence: 99%

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Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

et al. 2023

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InAs quantum dashes (Qdash) engineered to emit near 2 μm are envisioned to be promising quantum emitters for next-generation technologies in sensing and communications. In this study, we explore the effect of punctuated growth (PG) on the structure and optical properties of InP-based InAs Qdashes emitting near the 2-μm wavelength. Morphological analysis revealed that PG led to an improvement in in-plane size uniformity and increases in average height and height distribution. A 2 × boost in photoluminescence intensity was observed, which we attribute to improved lateral dimensions and structural stabilization. PG encouraged formation of taller Qdashes while photoluminescence measurements revealed a blue-shift in the peak wavelength. We proposed that the blue-shift originates from the thinner quantum well cap and decreased distance between the Qdash and InAlGaAs barrier. This study on the punctuated growth of large InAs Qdashes is a step toward realizing bright, tunable, and broadband sources for 2-μm communications, spectroscopy, and sensing.

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Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

et al. 2023

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“…11 By optimizing the nominal thickness, surrounding QW structure, annealing conditions, and arsenic flux, the photoluminescence (PL) emission from InAs Qdashes can be extended from 1.55 μm to 2 μm while still maintaining the strong PL intensity. 12 Furthermore, by depositing InAs in a punctuated growth strategy, the emission can be enhanced by almost 200%. 13 Here we present the epitaxial growth, device fabrication, and device testing of ridge waveguide lasers with InAs Qdashes as the active gain region.…”

Section: Introductionmentioning

confidence: 99%

InAs quantum dash lasers for 2-μm photonics

Chu,

Laryn,

Choi

et al. 2024

Novel in-Plane Semiconductor Lasers XXIII

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The 2 μm spectral window is a host of a variety of applications in communication and sensing. However, the development of nanoscale emitters for this window has largely stagnated. Here, we present our growth, fabrication, and testing of InAs quantum dash (Qdash) lasers on InP for 2 μm photonics. The samples were grown by molecular beam epitaxy. Ridge waveguide lasers emitted at 1.97 μm, coinciding with the ground-state emission from the Qdash ensemble. A low threshold current density of 131 A/cm 2 per Qdash layer was calculated under pulsed mode conditions. Good thermal stability was observed up to 50 °C, with a characteristic temperature of 44 K. InAs Qdash on InP is promising 0D laser gain materials for 2 μm communication and sensing.

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Engineering Photocarrier Redistributions in Graphene/III‐V Quantum Dot Mixed‐Dimensional Heterostructures for Radiative Recombination Enhancements

Chu,

Lung,

Laryn

et al. 2024

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Integration of graphene and quantum dots (QD) is a promising route to improved material and device functionalities. Underlying the improved properties are alterations in carrier dynamics within the graphene/QD heterostructure. In this study, it is shown that graphene functions as a carrier redistribution and supply channel when integrated with InAs QDs. Photoluminescence (PL) spectroscopy provides evidence that graphene modifies the redistribution, escape, and recombination dynamics of carriers in the InAs QD ensemble, which ultimately leads to enhanced radiative recombinations at all temperatures and excitation densities probed. It is also shown that the PL enhancement from the graphene/InAs QD heterostructure is greatest with a thin GaAs cap and at higher temperatures where devices operate. This study advances the understanding of graphene/QD heterostructures and can aid the design of mixed‐dimensional optoelectronic devices.

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Optical properties of coherent InAs/InGaAs quantum dash-in-a-well for strong 2 μm emission enabled by ripening process

Cited by 5 publications

References 41 publications

Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

InAs quantum dash lasers for 2-μm photonics

Engineering Photocarrier Redistributions in Graphene/III‐V Quantum Dot Mixed‐Dimensional Heterostructures for Radiative Recombination Enhancements

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