Optical properties of compositionally graded InxAl1–xAs/GaAs heterostructures

Yahyaoui, N.; Aloulou, S.; Chtourou, R.; Sfaxi, A.; Oueslati, M.

doi:10.1016/j.tsf.2007.03.083

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Cited by 3 publications

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“…2. As we have shown in previous reports [12,13], the PL spectra of the InAlAs step-graded layers at room temperature display two main PL bands A and B. The A band appears in S1 and S2 at the same energy 1.424 eV, which is the GaAs gap.…”

Section: Resultssupporting

confidence: 73%

Residual strain and alloying effects on the vibrational properties of step-graded InxAl1−xAs layers grown on GaAs

Sayari¹,

Yahyaoui²,

Meftah³

et al. 2009

Journal of Luminescence

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Section: Resultssupporting

confidence: 73%

Residual strain and alloying effects on the vibrational properties of step-graded InxAl1−xAs layers grown on GaAs

Sayari¹,

Yahyaoui²,

Meftah³

et al. 2009

Journal of Luminescence

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Photoluminescence of extended defects in heterostructures with InAlAs metamorphic buffer at different excitation wavelengths

Пушкарев

Галиев

Климов

et al. 2020

Journal of Luminescence

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Interpretation of photoluminescence spectra of metamorphic InAlAs/GaAs heterostructures

Denisova

Firsov

Комков

2019

J. Phys.: Conf. Ser.

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The results of analyzing the photoluminescence spectra of metamorphic In0.75Al0.25As/In0.05-0.8Al0.95-0.2As/GaAs heterostructures grown by molecular-beam epitaxy method are presented. In the spectra of low-temperature photoluminescence, three emission peaks have been detected, which correspond to carrier recombination in different areas of the structure. These include a part of the In0.75Al0.25As “virtual substrate” grown at high temperature, and the area of a triangular potential well formed by the meta-morphic buffer layer and the “virtual substrate”. Photoluminescence related to defects in the high-temperature part of the “virtual substrate” was also measured.

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Optical properties of compositionally graded InxAl1–xAs/GaAs heterostructures

Cited by 3 publications

References 11 publications

Residual strain and alloying effects on the vibrational properties of step-graded InxAl1−xAs layers grown on GaAs

Residual strain and alloying effects on the vibrational properties of step-graded InxAl1−xAs layers grown on GaAs

Photoluminescence of extended defects in heterostructures with InAlAs metamorphic buffer at different excitation wavelengths

Interpretation of photoluminescence spectra of metamorphic InAlAs/GaAs heterostructures

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