Residual strain and alloying effects on the vibrational properties of step-graded InxAl1−xAs layers grown on GaAs

Sayari, A.; Yahyaoui, N.; Meftah, A.; Sfaxi, A.; Oueslati, M.

doi:10.1016/j.jlumin.2008.09.004

Cited by 13 publications

(3 citation statements)

References 25 publications

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“…4(a) shows the disorder-activated modes in the low-energy range. 5,25) Moreover, this mode is induced by the non-uniformity of the alloy composition caused by the clustering, which is due to the large difference between the In-As and Al-As bond energies. spectra show also the InP optical phonons in the range 280-340 cm −1 .…”

Section: Resultsmentioning

confidence: 99%

“…spectra show also the InP optical phonons in the range 280-340 cm −1 . 5,25) In order to evaluate the wavenumbers of the different phonons contributing to the Raman spectra, a curve-fitting procedure was used (Lorentzian functions). From the fitting procedure, we found the presence of LO-like InAs in InAsP alloy at the inverted interface [shown by the green line in the inset of Fig.…”

Section: Resultsmentioning

confidence: 99%

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Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Smiri¹,

Saidi²,

Mlayah³

et al. 2020

Jpn. J. Appl. Phys.

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We report on combined photoluminescence (PL) and micro-Raman microscopy to study the effect of the V/III flux ratio on InAlAs ternary alloy grown on (311)A InP by metal-organic chemical vapor deposition. The PL of the type-II transition was studied in a wide range of temperatures (10–300 K) and excitation intensities. As the V/III flux ratio increased from 25 to 125, a redshift of the type-II transition was observed. Then, micro-Raman investigations showed the presence of an LO mode related to LO-like InAs in InAsP alloy at the inverted interface in our samples. Furthermore, we discuss the effect of laser excitation wavelength on the Raman spectrum. We also note that phonon peaks are very sensitive to different excitation sources (364 to 638 nm). At lower frequencies, disorder-activated longitudinal acoustic phonons are also observed, which consider the presence of potential fluctuations. This last generate the carrier’s localization, which confirmed by PL measurements. In all samples, a blueshift of the type-II transition is noted with increasing the excitation power, which may reflect the presence of carrier localization, whereas the temperature-dependent PL peak energy displayed unusual behavior, such as consecutive red–blue–redshift (S-shaped) behavior and an inverted N-shape in the full width at half maximum. These unusual behaviors are explained by carriers captured by localized recombination centers. Moreover, in the room temperature PL spectra two types of emission were detected at 1.3 and 1.55 μm.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Smiri¹,

Saidi²,

Mlayah³

et al. 2020

Jpn. J. Appl. Phys.

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“…This case is also observed in figure 2a with HRXRD toward c-direction. Average spacing D of 60° misfit dislocation was calculated from the measured in-plane mismatch using [32] / 2…”

Section: Ingaas Gaasmentioning

confidence: 99%

Interdiffusion phenomena in InGaAs/GaAs superlattice structures

Sarıkavak¹,

Öztürk

Mammadov

et al. 2010

Cryst. Res. Technol.

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We have studied structural properties of InGaAs/GaAs superlattice sample prepared by Molecular Beam Epitaxy (MBE) using high resolution X-ray diffractometer (HRXRD). Increasing strain relaxation and defect generations are observed with the increasing Rapid Thermal Annealing (RTA) temperature up to 775 °C. The higher temperatures bring out relaxation mechanisms; interdiffusion and favored migration. The defect structure and the defects which are observed with the increasing annealing temperature were analyzed. Firstly, the in-plane and out-of-plane strains after the annealing of sample were found. Secondly, the structural defect properties such as the parallel X-ray strain, perpendicular X-ray strain, misfit, degree of relaxation, x composition, tilt angles and dislocation that are obtained from X-ray diffraction (XRD) analysis were carried out at every temperature. As a result, we observed that the asymmetric peaks especially in asymmetric (224) plane was affected more than symmetric and asymmetric planes with lower polar or inclination angles due to c-direction at low temperature. These structural properties exhibit different unfavorable behaviors for every reflection direction at the increasing temperatures. The reason is the relaxation which is caused by spatially inhomogeneous strain distribution with the increasing annealing temperature. In the InGaAs superlattice samples, this process enhances preferential migration of In atoms along the growth direction. Further increase in the annealing temperature leads to the deterioration of the abrupt interfaces in the superlattice and degradation in its structural properties.

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Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes

Smiri

Saidi

Mlayah

et al. 2020

J Mater Sci: Mater Electron

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Residual strain and alloying effects on the vibrational properties of step-graded InxAl1−xAs layers grown on GaAs

Cited by 13 publications

References 25 publications

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Interdiffusion phenomena in InGaAs/GaAs superlattice structures

Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes

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