Optical Properties of Cu<sub>2</sub>ZnSnS<sub>4</sub> Thin Films Prepared by Sol–Gel and Sulfurization Method

Miyamoto, Yusuke; Tanaka, Kunihiko; Oonuki, Masatoshi; Moritake, Noriko; Uchiki, Hisao

doi:10.1143/jjap.47.596

Cited by 70 publications

(47 citation statements)

References 10 publications

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“…In the low energy side the energy dependence of the PL intensity is exponential whereas in the high energy side the fall of the intensity is steeper. Similar bands with asymmetrical shapes were observed in CZTS grown by other methods [15][16][17][18], as well as, in chalcopyrite-type semiconductors [19][20][21][22][23]. This is the first time PL results are reported for CZTS thin films grown through the sulphurization method.…”

Section: Resultssupporting

confidence: 81%

Study of optical and structural properties of Cu2ZnSnS4 thin films

et al. 2011

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Cu 2 ZnSnS 4 is a promising semiconductor to be used as absorber in thin film solar cells. In this work, we investigated optical and structural properties of Cu 2 ZnSnS 4 thin films grown by sulphurization of metallic precursors deposited on soda lime glass substrates. The crystalline phases were studied by X-ray diffraction measurements showing the presence of only the Cu 2 ZnSnS 4 phase. The studied films were copper poor and zinc rich as shown by inductively coupled plasma mass spectroscopy. Scanning electron microscopy revealed a good crystallinity and compactness. An absorption coefficient varying between 3 and 4 × 10 4 cm −1 was measured in the energy range between 1.75 and 3.5 eV. The bad gap energy was estimated in 1.51 eV. Photoluminescence spectroscopy showed an asymmetric broad band emission. The dependence of this emission on the excitation power and temperature was investigated and compared to the predictions of the donor-acceptor-type transitions and radiative recombinations in the model of potential fluctuations. Experimental evidence was found to ascribe the observed emission to radiative transitions involving tail states created by potential fluctuations.

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Section: Resultssupporting

confidence: 81%

Study of optical and structural properties of Cu2ZnSnS4 thin films

et al. 2011

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“…Broadbands with similar shape and peak positions in the same energy range have been observed by other authors. [18][19][20][21] To the best of our knowledge, this is the first time this emission has been observed in CZTS thin films prepared by sulfurization of metallic precursors.…”

Section: Discussionmentioning

confidence: 64%

“…Recent works have shown PL characterization of different CZTS types of samples: bulk single crystals, 18,19 monograin powders, 20 and thin films prepared by sol-gel. 21 The optical transitions in chalcopyrite-and kesterite-type materials have been discussed regarding mainly the compositional dependencies and degree of doping. Different types of radiative transitions have been identified.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

et al. 2011

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In this work, we investigated structural, morphological, electrical, and optical properties from a set of Cu 2 ZnSnS 4 thin films grown by sulfurization of metallic precursors deposited on soda lime glass substrates coated with or without molybdenum. X-ray diffraction and Raman spectroscopy measurements revealed the formation of single-phase Cu 2 ZnSnS 4 thin films. A good crystallinity and grain compactness of the film was found by scanning electron microscopy. The grown films are poor in copper and rich in zinc, which is a composition close to that of the Cu 2 ZnSnS 4 solar cells with best reported efficiency. Electrical conductivity and Hall effect measurements showed a high doping level and a strong compensation. The temperature dependence of the free hole concentration showed that the films are nondegenerate. Photoluminescence spectroscopy showed an asymmetric broadband emission. The experimental behavior with increasing excitation power or temperature cannot be explained by donor-acceptor pair transitions. A model of radiative recombination of an electron with a hole bound to an acceptor level, broadened by potential fluctuations of the valence-band edge, was proposed. An ionization energy for the acceptor level in the range 29-40 meV was estimated, and a value of 172 ± 2 meV was obtained for the potential fluctuation in the valence-band edge.

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“…Reports on the temperature dependence of the band gap of CZTS are very scarce, especially at low temperatures. In reference [3] a band gap energy shift smaller than 10 meV was noticed from 22 to 300 K (3.6 10 -5 eV/K). This result is not in accordance with reference [20] where the band gap was estimated from transmittance data in the range 77 to 410 K. An average band gap narrowing coefficient of 8.6 10 -4 eV/K was found.…”

Section: Pl -Ple Temperature Dependencementioning

confidence: 94%

“…In this paper a defect study is performed by means of photoluminescence spectroscopy (PL). Most CZTS PL studies show a broad peak around 1.3 eV [3,4,5,6,7]. Two broad PL bands were detected in reference [8].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence investigation of Cu 2 ZnSnS 4 thin film solar cells

et al. 2015

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Cu 2 ZnSnS 4 (CZTS) is a promising absorber for thin film solar cells which is non-toxic and consists of only abundant elements. In order to achieve higher solar cell efficiencies for this material, a better understanding about its defect structure is necessary. In this paper photoluminescence (PL) from sputtered CZTS thin film solar cells which differ in buffer layer thickness was studied. In the PL spectra three broad peaks could be distinguished between 0.9 and 1.3 eV. The PL measurements as a function of temperature and excitation power density revealed the presence of potential fluctuations. The separations between the band edge of the photoluminescence excitation signal and the PL emission peaks are large, which indicates that PL involves trapping of carriers by deep -level defects.

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Optical Properties of Cu₂ZnSnS₄ Thin Films Prepared by Sol–Gel and Sulfurization Method

Abstract: Cu 2 ZnSnS 4 (CZTS) thin films were prepared by a sol-gel sulfurization method. One sample (CZTS1) was stoichiometric (Cu

Cited by 70 publications

References 10 publications

Study of optical and structural properties of Cu2ZnSnS4 thin films

Study of optical and structural properties of Cu2ZnSnS4 thin films

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

Photoluminescence investigation of Cu 2 ZnSnS 4 thin film solar cells

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Optical Properties of Cu2ZnSnS4 Thin Films Prepared by Sol–Gel and Sulfurization Method

Abstract: Cu 2 ZnSnS 4 (CZTS) thin films were prepared by a sol-gel sulfurization method. One sample (CZTS1) was stoichiometric (Cu

Cited by 70 publications

References 10 publications

Study of optical and structural properties of Cu2ZnSnS4 thin films

Study of optical and structural properties of Cu2ZnSnS4 thin films

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

Photoluminescence investigation of Cu 2 ZnSnS 4 thin film solar cells

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Optical Properties of Cu₂ZnSnS₄ Thin Films Prepared by Sol–Gel and Sulfurization Method