2008
DOI: 10.1063/1.2977748
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Optical properties of dislocations in wurtzite ZnO single crystals introduced at elevated temperatures

Abstract: Optical properties of wurtzite ZnO bulk single crystals in which an arbitrary number (typically 109–1010 cm−2) of fresh dislocations were introduced intentionally by the plastic deformation at elevated temperatures (923–1073 K) were examined. Deformed specimens showed excitonic light emission with photon energies of 3.100 and 3.345 eV, as well as their LO phonon replicas at 11 K. The light intensities increased with increasing dislocation density. The activation energy for a thermal quenching of the 3.100 or 3… Show more

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Cited by 34 publications
(30 citation statements)
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“…The luminescence spectrum of ZnO consists of a strong bandedge emission (BE) at 3.37 eV [27][28][29] and a wide range of deep level emissions (DL) between 1.5 and 3.2 eV [30]. The BE peak intensity has been shown to decrease as dislocation density increases [22,27,[31][32][33][34].…”
Section: Introductionmentioning
confidence: 97%
“…The luminescence spectrum of ZnO consists of a strong bandedge emission (BE) at 3.37 eV [27][28][29] and a wide range of deep level emissions (DL) between 1.5 and 3.2 eV [30]. The BE peak intensity has been shown to decrease as dislocation density increases [22,27,[31][32][33][34].…”
Section: Introductionmentioning
confidence: 97%
“…From the analysis of the thermal quenching processes, the depth of the defect level ΔE associated with the 3.100 eV emission and that with the 3.345 eV one are estimated to be 0.3 eV and 0.05 eV, respectively. Since the PL intensities increase with increasing dislocation density, the emission bands are associated with the dislocations introduced at elevated temperatures (Ohno et al, 2008b). Fig.…”
Section: Dislocations In Wide Gap Semiconductorsmentioning
confidence: 99%
“…Since those dislocations are similar in type, the atomistic structure of a dislocation would be modified at elevated temperatures, presumably due to an interaction of the dislocation with point defects. Indeed, a dislocation involving point defects is the candidate for the 3.1 eV emission band (Ohno et al, 2008b). Also, the intensity of the green (2.43 eV) and yellow (2.18 eV) emissions, associated with Oand Zn-vacancies (Zhao et al, 2005), varies when dislocations modify their structure via their glide (Figs.…”
Section: In-situ Analysis Of Optoelectronic Properties Of Semiconductmentioning
confidence: 99%
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