Optical Properties of Edge‐Emitting Lasers: Measurement and Simulation

Schwarz, Ulrich; Witzigmann, Bernd

doi:10.1002/9783527610723.ch18

Nitride Semiconductor Devices: Principles and Simulation 2007

DOI: 10.1002/9783527610723.ch18

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Optical Properties of Edge‐Emitting Lasers: Measurement and Simulation

Ulrich Schwarz

Bernd Witzigmann

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Cited by 2 publications

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“…This influences the threshold current, however, it should not influence the threshold current density (j th ) because in index-guided nitride LDs the threshold current scales linearly with ridge width. 29) Figure 1 shows the band profiles and wavefunctions distribution for a thin 2.6 nm and a wide 10.4 nm QWs calculated for: (a) no current injection j = 0 A cm −2 and (b) current injection j = 100 A cm −2 . The band profiles have been calculated with the SiLense 5.4 package.…”

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confidence: 99%

Optical properties of III-nitride laser diodes with wide InGaN quantum wells

Muzioł

Hajdel

Siekacz

et al. 2019

Appl. Phys. Express

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In this paper we show that, despite a high piezoelectric field, a wide InGaN quantum well (QW) can be more effective as the active region of laser diodes (LDs) than the thin ones usually used. The optical gain in the LDs with a single wide QW is studied. It is shown that the differential gain in a LD with 10.4 nm QW is higher than in a LD with three 2.6 nm thick QWs. The high optical gain in a wide QW is interpreted as originating from transitions through excited states. Additionally, a substantial difference in lasing spectra between LDs with wide and thin QWs is found.

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mentioning

confidence: 99%

Optical properties of III-nitride laser diodes with wide InGaN quantum wells

Muzioł

Hajdel

Siekacz

et al. 2019

Appl. Phys. Express

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Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes

Kojima¹,

Schwarz²,

Funato³

et al. 2007

Opt. Express

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Optical gain spectra presented for (Al,In)GaN laser diodes with lasing wavelength ranging from UV (375 nm) to aquamarine (470 nm) show a strong increase in inhomogeneous broadening, caused by Indium composition and quantum well width fluctuations which increase with Indium mole fraction. These gain spectra provides a standard data set for the calibration of microscopic many-body simulations. We demonstrate by comparison with basic simulations that the different assumptions of a global constant carrier density or of global constant quasi-Fermi levels for electrons and holes lead to a strikingly different dependency of optical gain on carrier density. For constant quasi-Fermi levels the threshold carrier density becomes insensitive to inhomogeneous broadening for realistic parameters. This is in agreement with the observation that the threshold current is nearly independent over the wavelength range from near UV to aquamarine.

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Optical Properties of Edge‐Emitting Lasers: Measurement and Simulation

Cited by 2 publications

References 10 publications

Optical properties of III-nitride laser diodes with wide InGaN quantum wells

Optical properties of III-nitride laser diodes with wide InGaN quantum wells

Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes

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