Optical properties of II-VI epitaxial layers

Gutowski, J.

doi:10.1088/0268-1242/6/9a/009

Cited by 14 publications

(2 citation statements)

References 29 publications

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“…In recent years, much work, including Raman scattering, [1][2][3] has been devoted to the study of the optical properties of ZnTe. Although the electronic and vibrational properties of bulk ZnTe are already well known, some discrepancies concerning the interpretation of the photoluminescence ͑PL͒ results have appeared in literature 2,4 most of them arising from the different methods of growth and thermal expansion effects.…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

Camacho

Cantarero

Hernández‐Calderón

et al. 2002

Journal of Applied Physics

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We report resonant Raman scattering and photoluminescence ͑PL͒ measurements on two ZnTe thin films grown by molecular-beam epitaxy on GaAs substrates with thicknesses around 0.5 and 1.0 m. The data have been obtained by using the different excitation energies of an Ar ϩ laser to distinguish Raman from PL and analyze resonant effects. The characteristic features of the low-temperature PL spectra are the light and heavy free exciton emissions, split due to the thermal strain effect, followed by several phonon replicas of these lines. Moreover, longitudinal and transversal polariton splittings of heavy excitons are clearly observed. Their reduced masses have been obtained from the exciton binding energies. Room and low-temperature Raman spectra show, besides the typical longitudinal optical ͑LO͒ multiphonon emissions, forbidden zone-center transverse optical (TO)ϩ(nϪ1)LO phonon combinations, which yield an accurate value for the LO and TO phonon energies. The breakdown of the selection rules is attributed to surface faceting.

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Section: Introductionmentioning

confidence: 99%

Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

Camacho

Cantarero

Hernández‐Calderón

et al. 2002

Journal of Applied Physics

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“…A weak dislocation related PL at 2.74 eV is also observed [5]. The large strength of the Y band means that lattice-mismatch strain is relaxed by formation of misfit dislocations [6]. We notice also that the strain present in the epilayer shifts some PL bands by a few meV from their position in bulk ZnSe.…”

Section: Photoluminescence Studiesmentioning

confidence: 56%

Optical Properties of Molecular Beam Epitaxy Grown ZnSe on GaAs

Karpińska¹,

Suchocki²,

Godlewski³

et al. 1993

Acta Phys. Pol. A

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Photoluminescence studies of molecular beam epitaxy grown ZnSe-on-GaAs layers are presented. Tle high sensitivity of the PL technique allowed for identification unintentional dopants in pure ZnSe sample. Characteristic photoluminescence lines due to extended defects were observed. The experimental results obtained show a correlation between intentional doping level and extended defects concentration. We conclude also that even though molecular beam epitaxy layers are grown at low temperature, the self-ckpensation mechanism may still be important. For heavily doped sample edge emission is deactivated likely due to efficient energy transfer link with deep donor-acceptor pair bands.

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Optical non‐linearities and excitation dynamics in II–VI bulk and epitaxial materials

Gutowski

Hoffmann

1994

Adv Material for Optics Elec

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Excitonic processes in the band edge regime .determine the optical properties of Il-VI bulk and novel epitaxial materials. The interdependences of excitonic systems (i.e. free and bound excitons), high-density systems (e.g. biexcitons) and the transition into the electron-hole plasma state are of high complexity and depend sensitively on sample quality and purity, dopant concentration, excitation condition and density, etc. Resonant excitation spectroscopy and time-resolved analysis of creation and decay processes provide valuable experimental access to clarification of the above-mentioned mutual interactions. In this paper recent results obtained using these methods are surveyed.In the first part the development of luminescence and resonant excitation of bound exciton systems is treated under various excitation densities, for high excitation levels accompanied by biexciton formation and exciton-exciton collision processes. The specific properties observable when using heteroepitaxial structures instead of conventional bulk samples are discussed.In the second part the time characteristics of excitonic transitions are evaluated for various impurities, dopants and dopant concentrations, excitation via particular resonant excitation channels, and various excitation densities. Relaxation and conversion channels between excitonic systems are analysed, in particular in strained heteroepitaxial systems which show splitting effects of the bands from which the carriers stem. Time-resolved analysis is demonstrated to be extremely helpful for the analysis of unknown excitonic systems and transitions. Methods of varying the characteristic time constants are discussed, in particular with regard to intentional changes in impurity contents and excitation densities which are interesting for any application.

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Optical properties of II-VI epitaxial layers

Cited by 14 publications

References 29 publications

Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

Optical Properties of Molecular Beam Epitaxy Grown ZnSe on GaAs

Optical non‐linearities and excitation dynamics in II–VI bulk and epitaxial materials

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