Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

Camacho, J.; Cantarero, A.; Hernández‐Calderón, I.; González, L.

doi:10.1063/1.1516267

Cited by 33 publications

(14 citation statements)

References 14 publications

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“…For undoped ZnTe the strongest peaks were at 177⋅77 cm -1 and 207⋅31 cm -1 while for ZnTe(In) the corresponding peaks occurred at 177⋅19 cm -1 and 205⋅01 cm -1 . These represent the TO and LO phonon peaks for ZnTe which are reported to occur at 176⋅5 cm -1 and 205⋅02 cm -1 , respectively (Camacho et al 2002). The selection rules indicate that both phonons can be observed for the <111> surface as verified above.…”

Section: Resultssupporting

confidence: 55%

High resistivity In-doped ZnTe: electrical and optical properties

Bose

Bhunia

2005

Bull Mater Sci

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Semi-insulating <111> ZnTe prepared by In doping during Bridgman growth was found to have a resistivity of 5⋅ ⋅74 × 10 7 ohm-cm, the highest reported so far in ZnTe, with hole concentration of 2⋅ ⋅4 × 10 9 /cm 3 and hole mobility of 46 cm 2 /V⋅ ⋅s at 300 K. The optical band gap was 2⋅ ⋅06 eV at 293 K compared with 2⋅ ⋅26 eV for undoped semiconducting ZnTe. Thermally stimulated current (TSC) studies revealed 2 trap levels at depths of 202-222 meV and 412-419 meV, respectively. Photoluminescence (PL) studies at 10 K showed strong peaks at 1⋅ ⋅37 eV and 1⋅ ⋅03 eV with a weak shoulder at 1⋅ ⋅43 eV. Short anneal for 3 min at 250°C led to conversion to a p-type material with resistivity, 14⋅ ⋅5 ohm-cm, indicating metastable behaviour. Raman studies carried out on undoped and In-doped samples showed small but significant differences. Possible models for semi-insulating behaviour and meta-stability are proposed.

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Section: Resultssupporting

confidence: 55%

High resistivity In-doped ZnTe: electrical and optical properties

Bose

Bhunia

2005

Bull Mater Sci

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“…Besides the nLO peaks, TO + (n − 1)LO zone-center phonon combinations can also be resolved below nLO Raman peaks. 40 In addition to the strong nLO and TO + (n − 1)LO peaks, we observed a broadband and a pronounced high-frequency shoulder of the LO peak between TO and LO peaks. The low-frequency broadband can be well fitted with a Lorentzian profile centered at 199.6 cm −1 and with a FWHM of 20 cm −1 .…”

Section: Surface Optical Phononmentioning

confidence: 66%

“…Recently, many experimental works have been devoted to the growth and characterization of ZnTe-based structures. [38][39][40] Due to the lattice mismatch and difference in thermal expansion coefficient with the substrate, most ZnTe layers grown on GaAs/GaSb substrate using molecular beam epitaxy method induces a source of strain and structural defects, hampering the performance of related devices. Moreover, the ZnTe layers exhibit a thickness in micrometer range and area in ∼mm 2 range.…”

Section: Introductionmentioning

confidence: 99%

Exciton-phonon coupling in individual ZnTe nanorods studied by resonant Raman spectroscopy

et al. 2012

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The exciton-phonon coupling in high-quality cubic phase zinc telluride (ZnTe) nanorods (NRs) is investigated by resonant micro-Raman spectroscopy near the direct bandgap of ZnTe. The scattering cross section of longitudinal optical (LO) phonon is enhanced significantly in the resonant process, where the enhancement factor of LO modes is much higher than that of the transverse optical (TO) modes, indicating a dominant Fröhlich electron-phonon interaction mechanism. Up to fifth-order LO phonons are observed by resonant Raman scattering at room temperature. The Huang-Rhys factor of individual NRs-and thus the exciton-LO coupling strengths-is evaluated, showing increasing with the NR diameter. Surface optical (SO) phonon and its high-order overtones are observed between nLO and (n − 1)LO + TO for the first time, whose positions are consistent with a dielectric continuum model. Strong acoustic phonon-exciton coupling induces a high-frequency shoulder above each nLO peaks with two maxima located around 14 cm −1 and 32 cm −1 , which are assigned to transverse acoustic and longitudinal acoustic phonons, respectively. The resonant multiphonon scattering process involving acoustic and LO phonons is discussed based on an exciton-intermediated cascade model, where a scattering sequence of acoustic phonon followed by LO phonons is favorable. These results advance the understanding of electron-phonon coupling and exciton scattering in quasi-one-dimensional systems, especially in the scarcely documented ZnTe compound, facilitating the development and optimization of NR-based optoelectronic devices.

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“…3. 25 Six LO overtones can be observed in sample A while five or four ones can be found in samples B-D with a much lowered intensity. The Raman frequency shift at 203.5, 408.9, 614.4, 821.6, 1028.7, and 1234.2 cm À1 , with an energy separation of around 206 cm À1 , are ascribed to the longitudinal optical (LO) phonon modes of ZnTe at the C point of the k-space, respectively.…”

Section: Resultsmentioning

confidence: 92%

Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition

Tang

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inResidual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor depositiona)Electrical and optical studies of metal organic chemical vapor deposition grown N-doped ZnO filmsThe advantages of tellurium-nitrogen (Te-N) codoping are investigated in ZnO films grown by metal-organic chemical vapor deposition. Te incorporation gives aid in enhancing the N solubility by lowering its formation energy while N addition helps to stabilize the substituted Te on O sites with the phase-segregated ZnTe crystallites suppressed by forming the N-Zn-Te structures in the N-doped ZnTe x O 1Àx . Carbon related impurities, commonly existing in N-doped ZnO and acting as compensating centers for holes, are fully eliminated by the Te-N codoping. The codoping technique also lowers the energy level of the N O acceptors and leads to realizing N-doped ZnTe x O 1Àx films with holes as major carriers.

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Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs

Cited by 33 publications

References 14 publications

High resistivity In-doped ZnTe: electrical and optical properties

High resistivity In-doped ZnTe: electrical and optical properties

Exciton-phonon coupling in individual ZnTe nanorods studied by resonant Raman spectroscopy

Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition

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