Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition

Abstract

Articles you may be interested inResidual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor depositiona)Electrical and optical studies of metal organic chemical vapor deposition grown N-doped ZnO filmsThe advantages of tellurium-nitrogen (Te-N) codoping are investigated in ZnO films grown by metal-organic chemical vapor deposition. Te incorporation gives aid in enhancing the N solubility by lowering its formation energy while N addition helps to stabilize the substituted Te on O sites with the phase-segregated ZnTe crystallites suppressed by forming the N-Zn-Te structures in the N-doped ZnTe x O 1Àx . Carbon related impurities, commonly existing in N-doped ZnO and acting as compensating centers for holes, are fully eliminated by the Te-N codoping. The codoping technique also lowers the energy level of the N O acceptors and leads to realizing N-doped ZnTe x O 1Àx films with holes as major carriers.

Temperature-dependent photoluminescence of ZnO films codoped with tellurium and nitrogen

“…21 By tuning the temperature of the Te metal-organic (MO) precursor bubbler, three specific samples with different Te concentrations were fabricated on c-plane sapphire substrates. Based on extensive previous research papers by others [22][23][24][25] and us, 26,27 the incorporation of neutral N-H complexes followed by an annealing to drive out the H atoms (i.e., the de-hydrogen process) has been well-established to be a feasible path to the realization of p-type ZnO. Consequently, a post-growth thermal treatment in oxygen atmosphere for 10 min was employed for all the samples to activate the acceptors, 28 and also to repair the damaged host lattice caused by large quantities of Te and H atoms incorporated as grown.…”

Oxygen Induced Enhanced Photoanodic Response of ZnTe:O Thin Films: Modifications in Optical and Electronic Properties

“…Due to large surface/volume ratio, electronic properties of semiconductor nanocrystalline film/electrolyte are governed by interface trap density and defect concentration. Any change in them may modify electronic transport at the semiconductor/electrolyte interface. − It is also reported that oxygen incorporation in ZnTe decreases Zn vacancies which results in turn decreases the holes concentration. ,, …”

“…53−55 It is also reported that oxygen incorporation in ZnTe decreases Zn vacancies which results in turn decreases the holes concentration. 31,56,57 ZnTe:O (0.02%) sample exhibits a J Ph of ∼3.05 mA/cm 2 at 1.23 V versus RHE, with photocurrent onset potential of 0.40 V versus RHE, while ZnTe:O (0.2%) photoanode shows In the previous section, enhanced photocurrent in ZnTe:O thin films is attributed to increased absorption of the low energy photon due to oxygen incorporated electronic states formed with in the band gap. This is further verified by investigating PEC performance of ZnTe, ZnTe:O(0.02%) and ZnTe:O(0.2%) thin films under low (1.8 eV) and high energy (2.4 eV) illuminations and corresponding J−V characteristics are shown in Figure 7a, b, and c, respectively.…”

Recent progress of the native defects and p-type doping of zinc oxide

“…[143] The AI co-doping approach has been widely and popularly investigated in recent years as shown in Table 5. [22,25,[149][150][151][152][153][154][155][156][157][158][159][160][161][162][163][164][165] Briefly, the isovalent dopants include Be, Mg, S, Se, and Te. Various experiments have been designed to verify the theoretical predictions as well as to study the mechanism of the co-doping technologies.…”