Optical properties of InGaN quantum dots in monolithic pillar microcavities

Sebald, K.; Seyfried, Moritz; Kalden, J.; Gutowski, J.; Dartsch, H.; Tessarek, Christian; Aschenbrenner, T.; Figge, S.; Kruse, C.; Hommel, D.; Florian, Matthias; Jahnke, F.

doi:10.1063/1.3456376

Cited by 10 publications

(7 citation statements)

References 13 publications

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“…Single InGaN quantum dot PL was recently confirmed by m-PL measurements on a similar structure consisting of the same 40-fold bottom DBR (different pieces from first growth run) but with a 20-fold top DBR and a cavity thickness of 1l [11].…”

Section: Photoluminescencementioning

confidence: 74%

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Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity

Dartsch

Tessarek

Aschenbrenner

et al. 2011

Journal of Crystal Growth

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Section: Photoluminescencementioning

confidence: 74%

“…The existence of overgrown InGaN quantum dots was recently confirmed by m-PL measurements of their single line emission on a similar cavity structure [11].…”

Section: Stemmentioning

confidence: 93%

Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity

Dartsch

Tessarek

Aschenbrenner

et al. 2011

Journal of Crystal Growth

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“…For the calculations the experimentally obtained refractive index dispersion, absorption coefficient [18], DBR layer thicknesses, and pillar diameters were used as parameters. This way, Q=380 was determined which is slightly higher than the experimental value and that one obtained from the calculated reflectivity (Q=340, see [19]). The overall shape of the calculated spectrum is given by the superposition of the different transmission maxima possessing a finite width and corresponds quite well to the measured data.…”

Section: Resultsmentioning

confidence: 99%

Optical properties of wide‐bandgap monolithic pillar microcavities with different geometries

Seyfried

Kalden

Sebald

et al. 2011

Phys. Status Solidi (c)

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A customization of the optical properties of pillar microcavities on the desired applications is essential for their future use as quantum‐optical devices. Therefore, all‐epitaxial cavities with CdSe or InGaN quantum dots embedded in pillar structures with different geometries have been realized by focused‐ion‐beam etching. The high temperature stability of the emission and the large oscillator strength of quantum dots made of these material systems are combined with small mode volume pillar microcavities to utilize the light‐matter interaction. The quality factors of circularly shaped pillar microcavities have been measured and compared to theoretical calculations. As a possibility to achieve polarized light emission, asymmetrically shaped microcavities are presented. Examples of an elliptically shaped pillar as well as of photonic molecules are investigated with respect to their photoluminescence characteristics and polarization. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…For the third type of samples, which is as well grown by MOVPE, the low‐index layer was made of 67 nm of Al 0.82 In 0.18 N. For the bottom DBR 40 layers were used and for the top DBR 20 which surrounded the GaN λ cavity, where a single layer of InGaN QDs was embedded 38.…”

Section: Samples and Experimental Setupmentioning

confidence: 99%

Microphotoluminescence studies on GaN‐based airpost pillar microcavities containing InGaN quantum wells and quantum dots

Sebald¹,

Lohmeyer²,

Kalden³

et al. 2011

Physica Status Solidi (b)

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We report on the optical properties of monolithic GaN-based airpost pillar microcavities (MCs) with embedded InGaN quantum wells or quantum dots (QDs), respectively. The presented MCs are designed by use of different kinds of distributed Bragg reflectors consisting of either AlGaN/GaN, AlInN/GaN, or superlattices of AlN/InGaN and GaN. A quality factor of up to Q ¼ 260 has been achieved. Airpost pillar MCs, providing a three-dimensional optical confinement, are realized by focused ion beam etching starting from an all-epitaxially grown vertical-cavity surface-emitting laser structure. Pillar diameters below 1 mm are well controllable. The sidewalls are smooth and show a damaged surface layer of a thickness less than 2 nm only. Microphotoluminescence (m-PL) measurements reveal the longitudinal and transversal mode spectra of the cavities in good agreement with theoretical calculations based on a vectorial transfer-matrix method. Furthermore, the spectra of the QD based samples reveal distinct spectrally sharp emission lines around 2.73 eV which can be attributed to the emission of single-InGaN QDs and traced up to 120 K.Scanning electron micrograph of a GaN-based airpost pillar superimposed by the m-PL spectrum of a pillar with a diameter of d ¼ 1.8 mm. The measurement performed at T ¼ 150 K reveals the discrete resonator modes.

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Optical properties of InGaN quantum dots in monolithic pillar microcavities

Cited by 10 publications

References 13 publications

Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity

Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity

Optical properties of wide‐bandgap monolithic pillar microcavities with different geometries

Microphotoluminescence studies on GaN‐based airpost pillar microcavities containing InGaN quantum wells and quantum dots

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