Optical properties of ion-assisted deposited SiO thin films

Castro, Antonio; López, Fernando Martínez; Meléndez, Juan; Fernández, M.

doi:10.1016/0040-6090(94)90426-x

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…In this context, several methods have been developed to prepare silicon suboxide films at relatively low temperatures such as thermal evaporation, 3,4 low pressure chemical vapor deposition ͑CVD͒, photo-CVD ͑Refs. 5 and 6͒ and laser ablation.…”

Section: Introductionmentioning

confidence: 99%

Investigation of a nanocrystalline silicon phase embedded in SiOx thin films grown by pulsed laser deposition

Fazio

Barletta

Barreca

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The formation of nanocrystalline silicon clusters in SiOx thin films has been investigated by means of micro-Raman and Fourier transform infrared spectroscopic techniques. The samples were deposited, by means of pulsed laser ablation of a silicon target in a controlled oxygen gas environment, on substrates heated up to 883 K. Experimental results show that, by appropriately varying the deposition parameters, it is possible to achieve a fully coordinated silicon dioxide phase with the contemporary development of a nanometer-sized crystalline silicon phase and/or an amorphous one. Comparison between the effect of a relatively high substrate temperature and of a post-deposition annealing treatment have been exploited. From the line-shape analysis of the silicon TO vibrational mode Raman band, crystalline silicon volume fractions up to 90% have been estimated, while the nanocrystalline cluster sizes remained almost constant around 3.5 nm. A good agreement between our results and the predictions of silicon nanoclusters formation by a silicon atom diffusion-controlled mechanism has been found.

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Section: Introductionmentioning

confidence: 99%

Investigation of a nanocrystalline silicon phase embedded in SiOx thin films grown by pulsed laser deposition

Fazio

Barletta

Barreca

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Nowadays, there are the number of technologies for obtaining nanocomposite SiO 2 (Si) films, and each of them has its advantages and disadvantages. In this context, several methods have been developed to prepare silicon enriched silicon oxide films at relatively low temperatures such as thermal evaporation [6,7], a low pressure chemical vapor deposition (CVD), photo-CVD and laser ablation [8][9][10][11][12][13][14]. But even in case of the laser ablation, as a rule, the following high temperature annealing is needed to form the Si nanocrystals due to low laser intensity in process of deposition and low adsorption coefficient of SiO x at used wavelength (for example  < 10 -6 at λ < 532 nm) [10].…”

Section: Introductionmentioning

confidence: 99%

Transformation of SiOx films into nanocomposite SiO2(Si) films under thermal and laser annealing

Steblova¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched SiO x film at the first stage and annealing at the second one. The ion-plasma sputtering method has been used for deposition of the SiO x film. The influence of thermal and laser annealing on SiO x film properties has been investigated. Formation of silicon nanoislands on oxide film surface has been observed by AFM both after thermal and laser annealing. The height and surface density of the nanoislands depends both on the silicon content in the initial SiO x film and temperature of thermal annealing. The higher annealing temperature causes formation of large nanoislands, but their surface density decreases. Comparison of nanoislands created at thermal and laser annealing shows that in case of laser annealing the nanoislands are higher and their surface density is lower. The intensity of laser irradiation influences on nanoisland parameters significantly. The growth of electrical conductivity with thermal annealing temperature has been observed. The influence of gas atmosphere during annealing is also significant in case of higher temperatures. In case of laser annealing at the beginning at low laser irradiation intensities, the SiO x film conductivity increases, but the following growth of intensity causes the decrease in electrical conductivity.

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