Optical properties of lattice matched In_xGa_1–xP_1–yN_y heteroepitaxial layers on GaP

Abstract

Optical constants and band structure of InxGa1–xP1–yNy lattice matched to GaP (100) substrate are investigated. Nitrogen concentration in the film estimated by X‐ray diffraction and X‐ray photoelectron spectroscopy, was 1.4%, 1.8% and 3.5%. Refractive index and transition critical points E0 (Γv to Γc), E1 (Lv to Lc) and E2 (Xv to Xc) are evaluated by spectroscopic ellipsometry. When N composition increases from 1.4% to 3.5%, both photoluminescence (PL) peak energy, EPL, and E0 shift to lower energy, and the energy difference ΔE = E0 – EPL decrease from 380 meV to 110 meV. The large red‐sift of EPL from the E0 suggest that the luminescence is of defect‐related luminiscence, and crossover point of indirect band structure estimated by the extrapolation of N‐composition dependence of ΔE is estimated to be arroud in In0.1Ga0.9P0.96N0.04. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

MBE growth of highly strained InGaPN/GaPN quantum well with high indium content

“…The In content x was 33% in the In x Ga 1Àx P/GaP QW. Adding N into In x Ga 1Àx P was found not to affect the In incorporation at x content of 9%, which was confirmed by our results obtained by X-ray photoelectron spectroscopy (XPS) [3,4]. Therefore, the In content x in the In-…”

“…The In content and the N content were deduced from InGaP and GaPN bulk layers, respectively [3,12]. The N content z in the GaP 1Àz N z barrier was assumed to be the same as that in the GaPN bulk layer grown under the same RF power and N 2 flow.…”

“…Dilute nitrides, GaPN and InGaPN alloys with a few percent of N content have received much interest for optoelectronic integrated circuits constructed with Si and group III-V compound semiconductors [1][2][3][4]. Specifically, the InGaPN quaternary alloy has been used as an active layer in an In 0.04 Ga 0.96 P 0.962 N 0.038 /GaP 0.982 N 0.018 doubleheterostructure (DH) light-emitting diode (LED) latticematched to Si substrate [5].…”

Optical Properties

“…The alloy compositions investigated were 0.89 x 0.96 [153] and 0 x 0.06 [154]. The optical properties of Ga x In 1Àx N y P 1Ày epilayers on GaP(100) have been investigated using SE [155]. The compositions of Ga x In 1Àx N y P 1Ày layers were changed to satisfy the latticematching condition, i.e.…”

Band alignments of InGaPN/GaPN quantum well structures on GaP and Si

“…The optical transition of the GaPN alloy with N composition larger than 0.5% changes from indirect transition (G v -X c ) to direct transition (G v -G c ) [7]. The bandgap energy of InGaPN alloys are varied by varying In and N compositions under the condition of lattice matching to Si [8,9]. A dislocationfree In 0.04 Ga 0.96 P 0.961 N 0.039 /GaP 0.982 N 0.018 double-heterostructure light-emitting diode (LED) was fabricated on a Si substrate [10].…”