Optical Properties of Layer Compounds

Evans, B.

doi:10.1007/978-94-010-1478-6_1

Cited by 11 publications

(7 citation statements)

References 311 publications

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“…In order to understand high responsitivity and relatively fast transient response of the PDs in our work further, we correlated the photoresponse characteristic with the carrier transport process and the energy band diagrams of MoS 2 /Si heterojunction structure, and proposed a possible mechanism here, based on the above results. According to the previous reports, the electron affinity for MoS 2 and Si is 4.3 eV and 4.05 eV, and the bandgap value of them is known to be 1.3 eV (MoS 2 ) and 1.12 eV (Si). This phenomenon produced conduction and valence band offsets of 0.25 and 0.33 eV, respectively ( Figure a).…”

Section: Resultsmentioning

confidence: 95%

In Situ Fabrication of Vertical Multilayered MoS₂/Si Homotype Heterojunction for High-Speed Visible-Near-Infrared Photodetectors

Zhang

et al. 2016

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c2D transition metal dichalcogenides (TMDCs)-based heterostructures have been demonstrated to achieve superior light absorption and photovoltaic effects theoretically and experimentally, making them extremely attractive for realizing optoelectronic devices. In this work, a vertical multilayered n-MoS2/n-silicon homotype heterojunction is fabricated, which takes advantage of multilayered MoS2 grown in situ directly on plane silicon. Electrical characterization reveals that the resultant device exhibits high sensitivity to visible-near-infrared light with responsivity up to 11.9 A W(-1). Notably, the photodetector shows high-speed response time of ≈ 30.5 µs/71.6 µs and capability to work under higher pulsed light irradiation approaching 100 kHz. The high response speed could be attributed to a good quality of the multilayer MoS2 , as well as in situ device fabrication process. These findings suggest that the multilayered MoS2 /Si homotype heterojunction have great potential application in the field of visible-near-infrared detection and might be used as elements for construction of high-speed integrated optoelectronic sensor circuitry.

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Section: Resultsmentioning

confidence: 95%

In Situ Fabrication of Vertical Multilayered MoS₂/Si Homotype Heterojunction for High-Speed Visible-Near-Infrared Photodetectors

Zhang

et al. 2016

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“…Then we can write Consider now the absorption of light by a solid in the absence of an electric field. Then the perturbation introduced by the photon is given by (Evans 1976)…”

Section: Electroreflectancementioning

confidence: 99%

Application of electroreflectance analysis for organic semiconductor thin films

Xavier¹

1997

Bull Mater Sci

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Many organic semiconductors with conjugate bond structure possess photoconductivity. Conduction mechanism of organic materials exhibits 'dualism' since both intramolecular as well as inter-molecular aspects are involved in the excitation, absorption and transport of charge carriers. Modulation spectroscopy promises to be the most accurate method for analysis of organic photoconductors, especially of thin films. In this technique a periodic perturbation is applied to the material under study and the effect of the perturbation is separated from reflection or absorption while scanning through a given wavelength range by use of lock-in phase sensitive detection method. In electromodulation, particularly in electrolyte electromodulation, the applied field on the material produces changes in the dielectric function which corresponds to the change in reflectance. When the applied field is low the line-shape of spectrum is third-derivative like in comparison with the unmodulated reflectance spectrum. Using Aspnes three-point method the transitions corresponding to critical points can be determined. When the field is intermediate Franz-Keldysh oscillations, which are dc bias dependent, appear on the higher energy side of the transition energy from which the role of intra-molecular as well as intermolecular aspects in conduction mechanism can be understood and the carrier concentration could be determined. Though the electroreflectance method has been developed for inorganic semiconductors, it could be effectively applied for organic/molecular semiconductors as well if the constituent molecules are assumed to be the lattices. The study of organic photoconductors is very important since they are more and more promising especially in photocopying, photovoltaic and solar cells.

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“…We have tried to reduce the complexity of the problem by making some realistic approximations. In the low energy range, layered material show a great anisotropy due to the bidimensional character of the structure [8]. The optical properties depend mainly upon the orientation of the electric field relative to the layer plane.…”

Section: Mathematical Frameworkmentioning

confidence: 99%

Optical anisotropy in the VUV range : experimental studies and dielectric constants of monoclinic GaTe

1984

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2014 La réflectance de GaTe entre 2,5 et 26 eV, sous incidence normale et oblique, a été mesurée à l'aide d'un rayonnement synchrotron polarisé. Nous en avons déduit 3 indices de réfraction complexes relatifs aux 3 directions cristallographiques, en utilisant une nouvelle méthode de calcul, incorporant les relations de Kramers-Kronig. Il se vérifie que les transitions électroniques dans le domaine des 20 eV, à partir des niveaux 3d Ga, sont fortement localisées près des atomes de gallium. Certaines transitions à partir de la bande de valence apparaissent aussi plus ou moins localisées. Abstract. 2014 Normal and oblique incidence reflectances of GaTe have been measured in the 2.5 to 26 eV range using polarized synchrotron radiation. We have deduced 3 complex refractive indices, relative to 3 different crystallographic directions by means of a new method consistent with the Kramers-Kronig relations. We have verified that the electronic transitions in the 20 eV region, from the 3d Ga levels, are strongly localized near gallium atoms. Some transitions from the valence band also appear localized.

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Optical Properties of Layer Compounds

Cited by 11 publications

References 311 publications

In Situ Fabrication of Vertical Multilayered MoS₂/Si Homotype Heterojunction for High-Speed Visible-Near-Infrared Photodetectors

In Situ Fabrication of Vertical Multilayered MoS₂/Si Homotype Heterojunction for High-Speed Visible-Near-Infrared Photodetectors

Application of electroreflectance analysis for organic semiconductor thin films

Optical anisotropy in the VUV range : experimental studies and dielectric constants of monoclinic GaTe

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Optical Properties of Layer Compounds

Cited by 11 publications

References 311 publications

In Situ Fabrication of Vertical Multilayered MoS2/Si Homotype Heterojunction for High-Speed Visible-Near-Infrared Photodetectors

In Situ Fabrication of Vertical Multilayered MoS2/Si Homotype Heterojunction for High-Speed Visible-Near-Infrared Photodetectors

Application of electroreflectance analysis for organic semiconductor thin films

Optical anisotropy in the VUV range : experimental studies and dielectric constants of monoclinic GaTe

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In Situ Fabrication of Vertical Multilayered MoS₂/Si Homotype Heterojunction for High-Speed Visible-Near-Infrared Photodetectors

In Situ Fabrication of Vertical Multilayered MoS₂/Si Homotype Heterojunction for High-Speed Visible-Near-Infrared Photodetectors