Optical properties of LFZ grown β-Ga2O3:Eu3+ fibres

Santos, N. F.; Rodrigues, Joana; Fernandes, A.J.S.; Alves, L.C.; Alves, E.; Costa, F.M.; Monteiro, T.

doi:10.1016/j.apsusc.2011.07.069

Cited by 29 publications

(15 citation statements)

References 33 publications

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“…The spectra in Fig. 4 were normalized to the main Eu 3+ emission peak at ~611 nm attributed to the 5 D 0 → 7 F 2 intraionic transition in agreement with previous reports in Eu-doped Ga 2 O 3 films and nanostructures [4][5][6][7][8] . The annealing temperature has a strong effect on the Eu 3+ lines as seen in Fig.…”

Section: Resultssupporting

confidence: 63%

“…7a, clearly reveals this broad band. However, the typical red Eu 3+ emission is not observed in any of the bulk samples even when using a higher excitation density with the Nd:YAG laser, although it has been shown previously that Eu in Ga 2 O 3 polycrystals can be excited by this wavelength 8 .…”

Section: Comparing the Behavior Of Eu In Bulk Ga 2 O 3 Single Crystalmentioning

confidence: 90%

“…REs incorporation into single crystals, in contrast, remains challenging due their low solubility in the crystalline matrix. Incorporation of appreciable amounts of RE ions often leads to polycrystalline growth or even phase separation 8 . Ion implantation presents itself as a powerful technique to incorporate dopants in a reproducible way, with the possibility of easy lateral patterning and is less affected by solubility limits.…”

Section: Introductionmentioning

confidence: 99%

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Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Lorenz¹,

Peres²,

Felizardo³

et al. 2014

SPIE Proceedings

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Ga 2 O 3 bulk single crystals have been implanted with 300 keV Europium ions to fluences ranging from 1×10 13 to 4×10 15 at/cm 2 . The damage build-up and Eu-incorporation was assessed by Rutherford Backscattering Spectrometry in the channeling mode (RBS/C). RBS/C results suggest that implantation causes a mixture of defect clusters and extended defects such as dislocations. Amorphisation starts at the surface for fluences around 1×10 15 at/cm 2 and then proceeds to deeper regions of the sample with increasing fluence. Amorphous regions and defect clusters are efficiently removed during rapid thermal annealing at ~1100 ºC; however, Eu diffuses towards the surface. Nevertheless, Eu ions are optically activated and show cathodoluminescence at room temperature. Results in bulk samples are compared to those in Eu-implanted Ga 2 O 3 nanowires and despite strong similarities in the structural properties differences were found in the optical activation. Furthermore, damage and dopant incorporation studies were performed using the Perturbed Angular Correlation technique, which allows probing the immediate lattice surroundings of an implanted radioactive probe at the atomic level.

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Section: Resultssupporting

confidence: 63%

Section: Comparing the Behavior Of Eu In Bulk Ga 2 O 3 Single Crystalmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

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Doping of Ga₂O₃bulk crystals and NWs by ion implantation

Lorenz¹,

Peres²,

Felizardo³

et al. 2014

SPIE Proceedings

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“…Other interesting kinds of materials produced, as a response to the increasing energetic demand, are those in which the optical properties are modulated by electrons, namely, electro-optics. This, together with the previously commented gallium trend to be evaporated, make the work of Santos et al, in 2012 [95], scientifically very important. They were capable of growing fibers of the transparent conductive oxide (TCO) ß-Ga 2 O 3 doped with Eu 3+ , which is suitable to be employed on solar cell devices.…”

Section: Materials For Photonic and Optical Applicationsmentioning

confidence: 86%

“…Following the production of laser garnets, gadolinium-and gallium-based compositions have also been produced during the last several years. Taking into account the ease of evaporation of gallium oxide (Ga 2 O 3 ), an excess of the same must be introduced, aiming to obtain the desired compositions [95]. Thus, Harrington reported, for the first time in 2014 [42], the single-crystal production of Gd 3 Ga 5 O 12 (GGG) laser garnet.…”

Section: Materials For Photonic and Optical Applicationsmentioning

confidence: 99%

Laser Floating Zone Growth: Overview, Singular Materials, Broad Applications, and Future Perspectives

et al. 2020

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The Laser Floating Zone (LFZ) technique, also known as Laser-Heated Pedestal Growth (LHPG), has been developed throughout the last several decades as a simple, fast, and crucible-free method for growing high-crystalline-quality materials, particularly when compared to the more conventional Verneuil, Bridgman–Stockbarger, and Czochralski methods. Multiple worldwide efforts have, over the years, enabled the growth of highly oriented polycrystalline and single-crystal high-melting materials. This work attempted to critically review the most representative advancements in LFZ apparatus and experimental parameters that enable the growth of high-quality polycrystalline materials and single crystals, along with the most commonly produced materials and their relevant physical properties. Emphasis will be given to materials for photonics and optics, as well as for electrical applications, particularly superconducting and thermoelectric materials, and to the growth of metastable phases. Concomitantly, an analysis was carried out on how LFZ may contribute to further understanding equilibrium vs. non-equilibrium phase selectivity, as well as its potential to achieve or contribute to future developments in the growth of crystals for emerging applications.

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