In this work, the fine structure macro-porous silicon (macroPS) substrate was prepared by photo-electro-chemical etching of n-type silicon wafer. Ultraviolet illumination condition of wavelength 360nm wavelength and intensity of about 100mW/cm 2 with etching current density of about 50 mA/cm 2 and etching time 5 min was employed. The Hybrid device gold nanoparticles /macroPorous Silicon (AuNPs/macroPS) was fabricated by deposition AuNPs into mPS substrate Via immersion plating process of macroPS in the solution of HAuCl4 with the (10 -3 M) concentration and 2min immersion time. The characteristics of PS before and after immersion process were investigated by scanning electron microscopy (SEM), EDS, X-Ray diffraction (XRD), photoluminescence (PL) and Infrared spectroscopy (FTIR). The J-V characteristics of sandwich structure showed that the maximum sensitivity of the AuNPs/macro PS was about (90.5%)for compared with macro-PS substrate. The current-voltage characteristics were performed in primary vacuum with a base pressure of about 0.2mbar and CO2 with 1mbare concentrations. Significant enhancement was observed in sensitivity of the AuNPs/macroPS hybrid device and temporal response after deposition the AuNPs. Science, 2018, Vol. 59, No.1A, pp: 57-
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IntroductionAt present Silicon is the main material of micro-electronics; however it is not commonly used in opto-electronics. The reason is owing to the inherent nature of the indirect transition in the band-edge emission. When the visible photoluminescence (PL) of electrochemically etched porous silicon (PS) was reported by Canham in 1990, the material has been extensively studied to explain luminescence mechanism and to investigate its possible use as a new material for the optical device application [1]. The current devices have been proved not only to be individually low-cost and low-power devices, owing to the formation of electroless deposited low resistance [2,3]. A version process for coating the devices by the electroless deposition of metals provided enhanced sensitivity and selectivity to NO x , CO, and NH3. The carbon monoxide (CO 2 ) is normally classified as inert gas inters of an acid-base reaction. The output signal from the untreated porous silicon sensor is a weak signal. The surface treatment of porous silicon with TiO 2 and SnO 2 will improve the output signal from the sensor and hence enhancing the sensing capabilities [4-6], There are several axes for scientific research and applications within the following chemical sensor [7][8][9], tissue engineering [10], cell culture [11], drug delivery [12], biotechnology, gas separation and microelectronics [13]. Series applications of PS in sensor technology have been based on the change of conductivity or capacity of a material upon adsorption of gas molecules [14]. The gas detection can be carried out to a wide range of physical, chemical, electrochemical and optical principles [15]. Advantages of PS sensors are low cost, room temperature operation and possible integration with electr...