Optical properties of multilayer metal-dielectric nanofilms with all-evanescent modes

Feng, Simin; Elson, J. M.; Overfelt, P. L.

doi:10.1364/opex.13.004113

Cited by 101 publications

(48 citation statements)

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“…That is, there will be N − 1 transmission peaks at a given number of periods N . This result can be ascribed to the coupledresonance interference mechanism [36][37][38]. The number of peaks is equal to the number of coupling of evanescent waves (inside the layer S) between two consecutive dielectric layers.…”

Section: Numerical Results and Discussionmentioning

confidence: 96%

Complex Photonic Band Structures in a Photonic Crystal Containing Lossy Semiconductor Insb

Chang¹,

Wu²,

Wu³

2012

PIER

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Abstract-In this work, complex photonic band structure (CPBS) in a semiconductor-dielectric photonic crystal (SDPC) operating at terahertz frequencies is theoretically investigated. The SDPC is air/(S/D) N /air where the dielectric layer D is SiO 2 , the semiconductor layer S is an intrinsic semiconductor InSb, and N is the number of periods. Using the experimental data for the strongly temperaturedependent plasma frequency and damping frequency for InSb, we calculate the CPBS for the infinite SDPC at distinct operating temperatures. The CPBS is then compared with the calculated transmittance, reflectance, and absorptance as well in the finite SDPC. Based on the calculated CPBS, the role played by the loss factor (damping frequency), in InSb is revealed. Additionally, from the calculated transmittance spectra, we further investigate the cutoff frequency for the SDPC. The dependences of cutoff frequency on the number of periods and the filling factor of semiconductor layer are numerically illustrated.

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Section: Numerical Results and Discussionmentioning

confidence: 96%

Complex Photonic Band Structures in a Photonic Crystal Containing Lossy Semiconductor Insb

Chang¹,

Wu²,

Wu³

2012

PIER

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“…We utilized our fit [5] for the real and imaginary component of Ag dielectric permittivity. We determined the dispersion characteristics for our multilayer according to (1), (2) [10] (Fig. 2).…”

Section: Calculationmentioning

confidence: 99%

Surface Plasmon-Polariton Assisted Metal-Dielectric Multilayers as Passband Filters for Ultraviolet Range

et al. 2007

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We designed and fabricated metal-dielectric multilayers intended for passband filters in the ultraviolet range. We determined the dispersion characteristics by the Bloch approach to evanescent wave resonant coupling and calculated the spectral characteristics using the transfer matrix method while taking into account real dispersion and absorptive losses. We considered the influence of nanoscale interface roughness as a means to couple evanescent electromagnetic field to the propagating far field modes. In our structures both propagating and evanescent modes contribute to the overall performance, resulting in an enhanced transmission in the desired range, while retaining a strong suppression of undesired frequencies of more than four orders of magnitude. In our experiments we used radiofrequent sputtering of silver and silica and characterized our multilayers by UV-vis spectroscopy.

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“…Alongside the geometrical parameters of the PCs, the constituent materials types used in the PC have a great impact on their band structure. Optical properties of the PCs of various types of materials such as metals, semiconductors, graphenes, and metamaterials are explored in previous studies [7][8][9][10]. However, PBGs in conventional dielectric PCs strongly depend on the polarization and incidence angle of the electromagnetic waves and this may differ in other types of PCs as well.…”

Section: Introductionmentioning

confidence: 99%

Investigating Optical Properties of One-Dimensional Photonic Crystals Containing Semiconductor Quantum Wells

Mokhtarnejad

Asgari

Sabatyan

2017

International Journal of Optics

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This study examined MQWs made of InGaAs/GaAs, InAlAs/InP, and InGaAs/InP in terms of their band structure and reflectivity. We also demonstrated that the reflectivity of MQWs under normal incident was at maximum, while both using a strong pump and changing incident angle reduced it. Reflectivity of the structure for a weak probe pulse depends on polarization, intensity of the pump pulse, and delay between the probe pulse and the pump pulse. So this system can be used as an ultrafast all-optical switch which is inspected by the transfer matrix method. After studying the band structure of the one-dimensional photonic crystal, the optical stark effect (OSE) was considered on it. Due to the OSE on virtual exciton levels, the switching time can be in the order of picoseconds. Moreover, it is demonstrated that, by introducing errors in width of barrier and well as well as by inserting defect, the reflectivity is reduced. Thus, by employing the mechanism of stark effect MQWs band-gaps can be easily controlled which is useful in designing MWQ based optical switches and filters. By comparing the results, we observe that the reflectivity of MWQ containing 200 periods of InAlAs/InP quantum wells shows the maximum reflectivity of 96%.

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Optical properties of multilayer metal-dielectric nanofilms with all-evanescent modes

Cited by 101 publications

References 0 publications

Complex Photonic Band Structures in a Photonic Crystal Containing Lossy Semiconductor Insb

Complex Photonic Band Structures in a Photonic Crystal Containing Lossy Semiconductor Insb

Surface Plasmon-Polariton Assisted Metal-Dielectric Multilayers as Passband Filters for Ultraviolet Range

Investigating Optical Properties of One-Dimensional Photonic Crystals Containing Semiconductor Quantum Wells

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