Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm

Bloch, J.; Shah, Jagdeep; Pfeiffer, L. N.; West, K. W.; Chu, S. N. G.

doi:10.1063/1.1289493

Cited by 43 publications

(16 citation statements)

References 20 publications

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“…The size, surface density, shape, and size distribution of these self-assembled quantum dots depend on factors such as the substrate temperature, growth rate, and quantum dot composition. Figure 1 shows the principal attributes of our QD material, which comprises 6-8 QD layers with dots that are 30 nm in diameter and <10 nm high and is designed so that the fundamental optical resonance occurs near 1,300 nm (one of the telecommunication wavelength bands) at room temperature [2].…”

Section: Carrier Dynamics In Inas/gaas Self-assembled Quantum Dotsmentioning

confidence: 99%

Nanophotonics-quantum dots, photonic crystals, and optical silicon circuits: An excursion into the optical behavior of very small things

Dinu¹,

Rapaport

Chen

et al. 2005

Bell Labs Tech. J.

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Section: Carrier Dynamics In Inas/gaas Self-assembled Quantum Dotsmentioning

confidence: 99%

Nanophotonics-quantum dots, photonic crystals, and optical silicon circuits: An excursion into the optical behavior of very small things

Dinu¹,

Rapaport

Chen

et al. 2005

Bell Labs Tech. J.

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“…A QD laser diode is expected to have a low threshold current density, a high thermal stability and a high quantum efficiency due to d-like density of states of the QD [3,4]. In spite of these advantages, however, there have been lots of problems to be solved mainly due to the difficulties in fabricating small QDs at a nanometer scale in terms of both high quality and uniformity [5,6]. Therefore, to control the size uniformity in QDs is important to solve the size distribution of self-assembled QDs.…”

Section: Introductionmentioning

confidence: 99%

Step annealing effects on the structural and optical properties of InAs quantum dots grown on GaAs

Park

Kim

Yoon

et al. 2007

Journal of Crystal Growth

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“…For applications like laser devices it is, however, necessary to increase the QD density by using stacked layers to achieve sufficient active material for appropriate lasing operation. This method has been very successful for the group-III arsenides [27] and the II-VI wide bandgap semiconductors [28]. In addition, stacking of the QD layers is expected to result in an increasing uniformity of the QD size throughout the layering process [29], which has an important influence on the emission properties of the InGaN QDs [30].…”

mentioning

confidence: 98%

Optical properties of single InGaN quantum dots and their devices

Sebald

Kalden

Lohmeyer

et al. 2011

Physica Status Solidi (b)

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Nitride-based quantum dots have many attractive optical properties for the realization of quantum dot (QD) based devices which will be presented in this contribution. We will analyze the basic characteristics of single InGaN QDs and their electroluminescence (EL) as well as the optical properties of QD stacks and their gain spectra. The single QDs are characterized by the high temperature stability of their emission up to 150 K in PL and EL and even up to room temperature for stacked QD samples. Furthermore, the polarization of individual QD emission lines was analyzed giving an insight into their geometrical shape. Time-resolved microphotoluminescence (m-PL) measurements on the excitonic and biexcitonic transition of a single QD as well as on the influence of piezoelectric fields on them and on their binding energy were performed. Further, we present an analysis of electrically driven luminescence from single InGaN QDs embedded into a light emitting diode structure showing single sharp emission lines in the green spectral region with a high temperature stability up to 150 K. Furthermore, for the possible integration within optical devices in the future the threshold power density as well as the modal gain were investigated for samples with stacked InGaN QD layers. They show a modal gain per QD being comparable to that of II-VI and III-As compounds. These results give a good insight into the basic optical properties of InGaN QD based devices and showing their high potential for electrically driven single photon emitters as well as for bright, low-threshold InGaN QD based light emitting devices in the near future.

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Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm

Abstract: We report the growth and characterization of multiple layers of self-organized InAs quantum dots emitting near 1.3 μm. We analyze their optical properties as a function of the number of dot layers and investigate how the vertical stack modifies the dot size distribution.

Cited by 43 publications

References 20 publications

Nanophotonics-quantum dots, photonic crystals, and optical silicon circuits: An excursion into the optical behavior of very small things

Nanophotonics-quantum dots, photonic crystals, and optical silicon circuits: An excursion into the optical behavior of very small things

Step annealing effects on the structural and optical properties of InAs quantum dots grown on GaAs

Optical properties of single InGaN quantum dots and their devices

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