Step annealing effects on the structural and optical properties of InAs quantum dots grown on GaAs

Park, Ho Jin; Kim, Jong Ho; Yoon, J.J.; Son, Jeong‐Sik; Lee, D.Y.; Ryu, Hyukhyun; Jeon, Minhyon; Leem, Jae‐Young

doi:10.1016/j.jcrysgro.2006.11.337

Cited by 6 publications

(1 citation statement)

References 15 publications

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“…This chapter aims to discuss the effect of rapid thermal annealing (RTA) on the PL performance of the sputtering induced GaAs/AlGaAs QDs. Improvement in the optical properties of the QDs following RTA has been widely studied and reported [27][28][29][30][31][32]. However, most works were based on the lattice mismatched In(Ga)As/GaAs QD systems.…”

Section: Objectivesmentioning

confidence: 99%

A study of semiconductor nanostructures formed by surface modification

Wang¹

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Semiconductor nanostructures formed by a surface modification process caused by ion sputtering is studied in this thesis. The microscopic dynamics of the semiconductor surface undergoing ion impingement is discussed in detail. Due to the promising controllability and minimal damage creation on the substrate, low ion ABSTRACT iv suggests that the reported fabrication technique is significant for applications that aim to improve the radiative efficiency of GaAs/AlGaAs QDs by RTA without introducing large undesirable blueshift.

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Section: Objectivesmentioning

confidence: 99%

A study of semiconductor nanostructures formed by surface modification

Wang¹

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The effect of post‐growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy

Moon¹,

Lee²,

Ha³

et al. 2012

Physica Rapid Research Ltrs

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We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy, and obtained the geometries of the dots by scanning transmission electron microscopy. Post‐growth thermal annealing is essential for the optical activation of quantum dots grown by droplet epitaxy. We measured the emission energy shifts of the dots and the underlying superlattice by post‐ growth thermal annealing, and specified the emission from dots by selectively etching the structure down to a low layer of quantum dots. We studied the influence of the degree of annealing on the optical properties of the dots from the peak shifts of the superlattice, since the superlattice has a uniform and well‐defined geometry. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots

Srujan

Ghosh

Sengupta

et al. 2010

Journal of Applied Physics

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Optical observation of single-carrier charging in type-II quantum ring ensembles Appl. Phys. Lett. 100, 082104 (2012) High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities J. Appl. Phys. 111, 043107 (2012) Surface diffusion and layer morphology of ( (112)) GaN grown by metal-organic vapor phase epitaxy J. Appl. Phys. 111, 033526 (2012) Single photon emission from InGaN/GaN quantum dots up to 50K Appl. Phys. Lett. 100, 061115 (2012) Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN J. Appl. Phys. 111, 033517 (2012) Additional information on J. Appl. Phys. We present a model for the effect of thermal annealing on a single-layer InAs/GaAs quantum dot ͑QD͒ heterostructure and study the corresponding variation in full photoluminescence ͑PL͒ spectrum. In/Ga interdiffusion due to annealing is modeled by Fickian diffusion and the Schrödinger equation is solved separately for electrons and holes to obtain ground state PL peaks of the heterostructure at different annealing temperatures. We theoretically examine the decrease in strain effects and carrier confinement potentials with annealing. PL spectra of the entire ensemble of QDs, annealed at different temperatures, are calculated from a lognormal distribution of QD heights derived from experimental atomic force microscopy ͑AFM͒ data. Results from our calculations, which illustrate the blueshift in emission wavelength and linewidth variation in PL with annealing, are in excellent agreement with experimental PL observations on the same samples. This highlights the potential of the model to assist in precisely engineering the optical properties of QD materials for specific device applications. Moreover, the simplicity of the model and its multiple useful features including computation of material interdiffusion, band profiles and full PL spectra make it a valuable tool to study annealing effects on QD heterostructures.

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Step annealing effects on the structural and optical properties of InAs quantum dots grown on GaAs

Cited by 6 publications

References 15 publications

A study of semiconductor nanostructures formed by surface modification

A study of semiconductor nanostructures formed by surface modification

The effect of post‐growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy

Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots

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