Optical properties of nanocrystalline SnS2 thin films

Investigations on the Properties of Nanostructured Mg-Doped Sn2S3 Thin Films towards Photovoltaic Applications

“…Its band gap varies in the range of 0.8-3.5 eV [1,2] which make it suitable as an absorber or window layer in photovoltaic solar cells. Tin sulphide has three main phases of which SnS 2 and SnS exhibit layered structure whereas Sn 2 S 3 exhibit ribbon-like structure [3].…”

Structural and electrical properties of SnS2 thin films

“…The advantages of SnS 2 are that it is non-toxic and its constituent elements (Sn and S) are cheap and Earthabundant. Tin disulfide thin films can be obtained using the following methods: ionic layer adsorption and reaction (SILAR) [18], spray pyrolysis [14,19e21], thermal vacuum evaporation [13,22], plasma-enhanced chemical vapour deposition (PECVD) [15], and dip coating [23]. Each of the methods of obtaining SnS 2 thin films has its advantages and disadvantages.…”

Influence of tin precursor concentration on physical properties of nebulized spray deposited tin disulfide thin films

“…The atomic percentage of sulfur had decreased from 69.02% to 64.95% when increasing the precursor concentrations from 0.05 to 0.25 M, respectively. The nearly correct stoichiometric ratio of 33.5:66.5% was observed for tin and sulfur at the precursor concentration of 0.2 M. Panda et al [18] reported similar stoichiometric ratio for the nano crystalline SnS 2 . For 0.25 M precursor concentration, the atomic percentage of tin and sulfur was observed as 35.05 and 64.95%, respectively, which predicts the mixed phases of SnS, Sn 2 S 3 , and SnS 2 present in this film prepared with a precursor concentration of 0.25 M. The changes observed in the stoichiometric ratio with precursor concentration were also supported by the structure analysis and surface morphology.…”

“…This (001) orientation was matched well with the JCPDS file no-23-0677. Panda et al [18] reported similar peak around 14.88°for the nano crystalline SnS 2 thin films prepared by dip-coating method. The low-intensity diffraction peak was observed around 14.8°at the precursor concentration of 0.05 M. The intensity of that (001) diffraction peak with hexagonal phase became more intense and sharp with the increase in precursor concentration up to 0.2 M, which shows an enhancement of the crystallinity of the layers.…”

“…Thin films of SnS 2 were fabricated by various techniques like close-spaced sublimation [11], sulphurization of metallic precursors [12], atmospheric pressure chemical vapor deposition [13], chemical vapor transport [14], chemical deposition [15], vacuum evaporation [16,17], dip coating [18,19], solvothermal process [20], chemical spray pyrolysis [21,22] and each method has its own characteristic advantages and drawbacks in producing homogeneous and defect-free thin film. Among them, nebulized spray pyrolysis method is principal to prepare tin disulfide thin film, which is a low-cost method that can be used to coat uniform deposition on large surface area [23] with less solution wastage.…”