Optical properties of p-type SnOx thin films deposited by DC reactive sputtering

Guzmán, David Saeteros; Quevedo‐Lopez, Manuel; Ramı́rez-Bon, R.

doi:10.1007/s10854-018-0406-1

Cited by 16 publications

(11 citation statements)

References 35 publications

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“…In the as-deposited state (upper), the HR O 1s spectrum exhibits slight asymmetry in the peak that is deconvoluted into two peaks, one at 529.64 eV (strong) due to lattice oxygens in SnO x and another at 530.67 eV (weak) attributed to the presence of oxygen-related defects or the hydroxyl group. 67 After annealing (lower), the overall peak location shifted toward higher binding energy by approximately 0.94 eV, which results from the crystallization reaction during annealing, leading to a higher binding energy of oxygen in the annealed SnO x . It should also be noted that no significant asymmetry is observed in the annealed HR O 1s spectrum, which can be understood by the fact that the oxygen defects present in the as-deposited state were oxidized during annealing in air.…”

Section: Resultsmentioning

confidence: 99%

“…Core-level HR O 1s XPS spectra are shown in Figure b. In the as-deposited state (upper), the HR O 1s spectrum exhibits slight asymmetry in the peak that is deconvoluted into two peaks, one at 529.64 eV (strong) due to lattice oxygens in SnO x and another at 530.67 eV (weak) attributed to the presence of oxygen-related defects or the hydroxyl group . After annealing (lower), the overall peak location shifted toward higher binding energy by approximately 0.94 eV, which results from the crystallization reaction during annealing, leading to a higher binding energy of oxygen in the annealed SnO x .…”

Section: Results and Discussionmentioning

confidence: 99%

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High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnO_x and n-InGaZnO

Lee

Park

Clevenger

et al. 2021

ACS Appl. Mater. Interfaces

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The fabrication of oxide-based p−n heterojunctions that exhibit high rectification performance has been difficult to realize using standard manufacturing techniques that feature mild vacuum requirements, low thermal budget processing, and scalability. Critical bottlenecks in the fabrication of these heterojunctions include the narrow processing window of p-type oxides and the charge-blocking performance across the metallurgical junction required for achieving low reverse current and hence high rectification behavior. The overarching goal of the present study is to demonstrate a simple processing route to fabricate oxide-based p−n heterojunctions that demonstrate high on/off rectification behavior, a low saturation current, and a small turn-on voltage. For this study, room-temperature sputter-deposited p-SnO x and n-InGaZnO (IGZO) films were chosen. SnO x is a promising p-type oxide material due to its monocationic system that limits complexities related to processing and properties, compared to other multicationic oxide materials. For the n-type oxide, IGZO is selected due to the knowledge that postprocessing annealing critically reduces the defect and trap densities in IGZO to ensure minimal interfacial recombination and high charge-blocking performance in the heterojunctions. The resulting oxide p−n heterojunction exhibits a high rectification ratio greater than 10 3 at ±3 V, a low saturation current of ∼2 × 10 −10 A, and a small turn-on voltage of ∼0.5 V. In addition, the demonstrated oxide p−n heterojunctions exhibit excellent stability over time in air due to the p-SnO x with completed reaction annealing in air and the reduced trap density in n-IGZO.

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Section: Resultsmentioning

confidence: 99%

Section: Results and Discussionmentioning

confidence: 99%

High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnO_x and n-InGaZnO

Lee

Park

Clevenger

et al. 2021

ACS Appl. Mater. Interfaces

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“…A typical X-ray diffractogram shown in Figure 1(b) exhibits a (Figure 1e) was also determined to be ∼0.88 eV from a Tauc plot for the indirect transition of (α) 1/2 vs hν, which is matched with the values (∼0.7−1.0 eV) found from previous studies, of which the indirect E g values were estimated from absorption spectra and theoretical calculations. 8,47,52,53 Cross-sectional microstructures and elemental distributions were investigated through TEM and EDS. annular dark-field (HAADF) TEM image (Figure 1g) and its associated EDS elemental mapping (Figure 1h,i) were obtained from a SiO 2 /p-SnO x sample.…”

Section: Resultsmentioning

confidence: 99%

Multimodal Encapsulation to Selectively Permeate Hydrogen and Engineer Channel Conduction for p-Type SnO_x Thin-Film Transistor Applications

Lee

Zhang

Chang

et al. 2022

ACS Appl. Mater. Interfaces

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It has been challenging to synthesize p-type SnO x (1 < x < 2) and engineer the electrical properties such as carrier density and mobility due to the narrow processing window and the localized oxygen 2p orbitals near the valence band. Herein, we report on the multifunctional encapsulation of p-SnO x to limit the surface adsorption of oxygen and selectively permeate hydrogen into the p-SnO x channel for thin-film transistor (TFT) applications. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements identified that ultrathin SiO2 as a multifunctional encapsulation layer effectively suppressed the oxygen adsorption on the back channel surface of p-SnO x and selectively diffused hydrogen across the entire thickness of the channel. Encapsulated p-SnO x -based TFTs demonstrated much enhanced channel conductance modulation in response to the gate bias applied, featuring higher on-state current and lower off-state current (on/off ratio > 103), field effect mobility of 3.41 cm2/(V s), and threshold voltages of ∼5–10 V. The fabricated devices show minimal deviations as small as ±6% in the TFT performance parameters, which demonstrates good reproducibility of the fabrication process. The relevance between the TFT performance and the effects of hydrogen permeation is discussed in regard to the intrinsic and extrinsic doping mechanisms. Density functional theory calculations reveal that hydrogen-related impurity complexes are in charge of the enhanced channel conductance with gate biases, which further supports the selective permeation of hydrogen through a thin SiO2 encapsulation.

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“…The bandgap was a little different for the SnO x thin film deposited at a ppO 2 of 18.5% (2.86 eV), although the rest of the n‐type samples showed a bandgap in the range obtained for the p‐type samples. Noteworthy, those bandgap values are indicative of high transparency in the p‐ and n‐type SnO x thin films, which allows the fabrication of p–n homo‐junctions using transparent SnO x thin films 35 …”

Section: Resultsmentioning

confidence: 99%

SnO_x thin films with tunable conductivity for fabrication of p–n homo‐junction

Garzón-Fontecha

Castillo

Curiel

et al. 2020

Surface & Interface Analysis

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Tin oxide (SnO x) has been widely used for the fabrication of transparent and flexible devices because of its excellent optical and electronic properties. In this work, we established a methodology for the synthesis of SnO x thin films with p-type and n-type tunable conductivity by direct currecnt (DC) magnetron sputtering. The SnO x thin films changed from p-type to n-type by increasing the relative oxygen partial pressure (ppO 2) from 4.8% to 18.5% and by varying the working pressure between 1.8 and 2.5 mTorr. The SnO x thin films were annealed at 160 C, 180 C, and 200 C for 30 min to promote the formation of the desired crystalline structures. At the annealing temperature of 180 C in air ambient, the SnO x thin films showed a tetragonal structure with Sn traces. Having found the optimal conditions, we deposited both types of SnO x thin films with the same tetragonal structure and similar chemical stoichiometry. Also, the conditions to obtain thin films with the highest mobility values for p-type (1.10 cm 2 /Vs) and n-type (22.20 cm 2 /Vs) were used for fabricating the device. Finally, the implementation of a SnO x-based p-n diode was demonstrated using transparent SnO x thin films developed in this work, illustrating their potential use in transparent electronics.

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Optical properties of p-type SnOx thin films deposited by DC reactive sputtering

Cited by 16 publications

References 35 publications

High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnO_x and n-InGaZnO

High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnO_x and n-InGaZnO

Multimodal Encapsulation to Selectively Permeate Hydrogen and Engineer Channel Conduction for p-Type SnO_x Thin-Film Transistor Applications

SnO_x thin films with tunable conductivity for fabrication of p–n homo‐junction

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Optical properties of p-type SnOx thin films deposited by DC reactive sputtering

Cited by 16 publications

References 35 publications

High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnOx and n-InGaZnO

High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnOx and n-InGaZnO

Multimodal Encapsulation to Selectively Permeate Hydrogen and Engineer Channel Conduction for p-Type SnOx Thin-Film Transistor Applications

SnOx thin films with tunable conductivity for fabrication of p–n homo‐junction

Contact Info

Product

Resources

About

High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnO_x and n-InGaZnO

High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnO_x and n-InGaZnO

Multimodal Encapsulation to Selectively Permeate Hydrogen and Engineer Channel Conduction for p-Type SnO_x Thin-Film Transistor Applications

SnO_x thin films with tunable conductivity for fabrication of p–n homo‐junction