Optical properties of Pb(Zr,Ti)O3 thin films on sapphire prepared by metalorganic decomposition process

Abstract

Pb(Zr 0.52 Ti 0.48 ) O 3 (PZT) thin films were synthesized on a sapphire substrate for application as planar optical waveguide devices using a metalorganic decomposition (MOD) process. Pyrochlore phase, which always forms preferentially when the PZT thin films (∼200 nm) are deposited on a sapphire substrate directly, has been effectively suppressed by using a SrTiO3 (STO) film (∼190 nm) as a buffer layer. The PZT/sapphire thin films have a significantly larger refractive index than the STO/sapphire ones: nPZT=2.2012 and nSTO=2.0639 (at 632.8 nm) by prism coupling measurement and nPZT′=2.215 and nSTO′=2.084 (at 632.8 nm) by optical transmission spectroscopic measurement. The STO layer cannot only serve as buffer layer for enhancing the crystallization kinetics of the subsequently deposited PZT thin films, but can also serve as cladding layer in a ridge-type planar waveguide, which uses PZT thin film as core materials.

Strong electro-optically active Ni-substituted Pb(Zr0.35Ti0.65)O3 thin films: toward integrated active and durable photonic devices

“…Our PZTN thin films have a refractive index ranging from 2.23 to 2.36 at 632.8 nm which is comparable to that of the pure PZT thin film (n = 2.215-2.431). 42 It is lower than that of PMN-PT (n = 2.599) and very similar to that of (Pb,La)(Zr,Ti)O 3 (PLZT, n = 2.345) using a prism coupler. 25,43 Notably, the BO 6 octahedra in an oxygen-octahedral ABO 3 thin film dominates its corresponding optical properties and the lowest energy oscillator is the largest contributor to the dispersion of the refractive index.…”

Directly patterning ferroelectric films by nanoimprint lithography with low temperature and low pressure

“…The better ferroelectric properties can be induced from the perovskite phase. 12,13 In order to reduce the requirement of imprint pressure, the sharp mold is used to increase the tip pressure. Figure 3͑a͒ shows the silicon mold used in our experiments that is fab- ricated by using the electron beam lithography followed by HDP-RIE process.…”

Role of TiO2 Seed Layer Thickness on the Nanostructure Evolution and Phase Transformation Behavior of Sputtered PZT Thin Films During Post‐Deposition Air‐Annealing

“…Applying a seed layer or a template layer prior to PZT film deposition is considered to be one of such effective approaches for growing high quality PZT film at low processing temperature . A suitable seed layer of optimal thickness in between PZT film and substrate not only suppresses the pyrochlore/fluorite phase formation, but also improves the crystalline quality of the PZT films grown on lattice mismatched substrates . Varieties of seed layers have so far been used to develop and to control the crystalline orientation of the perovskite PZT films.…”