Optical properties of plasma species absorbed during diamond deposition on steel

Shahedipour, F.; Conner, B. P.; White, H. W.

doi:10.1063/1.1288508

Cited by 2 publications

(4 citation statements)

References 17 publications

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“…45 Varying methane (CH 4 ) to hydrogen (H 2 ) ratios of 4 to 9% was used to coat stainless steel substrates with diamond thin film using electron cyclotron resonance (ECR) MPCVD technique. 46 Below CH 4 /H 2 ratio of 4% no diamond deposition was detected. In the deposited films, graphite peak at 1600 cm 21 disappeared at the CH 4 /H 2 ratio of 5% and then at higher ratio it reappeared, which was confirmed by Raman spectroscopy.…”

Section: Nucleation On Intermediate Layer Of Graphitementioning

confidence: 98%

“…153 Effect of CH 4 /H 2 ratios have been used to study the effect of CH 4 concentration on the quality of the film. 46 The presence of a small amount of N 2 in the precursor gases proved beneficial to getting NCD films. Presence of O 2 in the precursor gases either as a pure O 2 or in the form of some oxides like CO 2 or CO helps in achieving low temperature growth.…”

Section: Effect Of Precursor Gasesmentioning

confidence: 99%

“…Varying proportion of diamond and graphite was obtained in Raman spectroscopy during deposition of diamond on stainless steel substrate at low pressure and temperature with different CH 4 /H 2 ratios from 4 to 9%. 46 The early stage of film growth revealed that the adsorbed amount of sp 3 and sp 2 C on the substrate was related to the ratio of CH 4 to H 2 in the precursor gases, which was identified from an in situ FTIR, employing reflection-absorption geometry (FTIRRAS) and OES. The sample grown with 5%CH 4 in H 2 showed no contribution from graphitic carbon but, it reappeared at y1650 cm 21 in Raman spectra for CH 4 concentration >6%.…”

Section: Effect Of Precursor Gasesmentioning

confidence: 99%

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A review of nucleation, growth and low temperature synthesis of diamond thin films

Das¹,

Singh²

2007

International Materials Reviews

149

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Diamond thin films have outstanding optical, electrical, mechanical and thermal properties, which make these attractive for applications in a variety of current and future systems. In particular, the wide band gap, optical transparency and unusually high thermal conductivity of diamond thin films make them an ideal semiconductor for applications in current and future electronics. However, synthesis of diamond thin films with adequate quality remains a challenging task. Synthesis of diamond at low temperatures is even more challenging because of the difficulties in the nucleation and growth steps involved in diamond thin film deposition on a variety of substrates. Among the several deposition techniques for synthesising diamond films, plasma enhanced chemical vapour deposition is the most promising technique because of its potential for low temperature synthesis. Consequently, the first part of this paper reviews the current state of the nucleation and growth of diamond during chemical vapour deposition. A uniform and high nucleation density is a prerequisite for getting a good quality diamond film with significant growth rate. Also, since the process conditions for nucleation and growth steps are different, attempts are made in this review to identify the important parameters responsible for enhancing the nucleation and growth rates of diamond film. Describing the indispensable need for low temperature growth of diamond film, the second part of the paper reviews the research on the growth of diamond thin films at low temperatures. In spite of the slower kinetics at lower deposition temperatures, an attempt is made to identify the key processing conditions, which enhance the low temperature growth process. In addition, the mechanisms of diamond nucleation and growth are discussed based on the observations from in situ characterisation techniques such as Fourier transform infrared reflection absorption spectroscopy, real time spectroscopic ellipsometry and molecular beam mass spectroscopy.

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Section: Nucleation On Intermediate Layer Of Graphitementioning

confidence: 98%

Section: Effect Of Precursor Gasesmentioning

confidence: 99%

Section: Effect Of Precursor Gasesmentioning

confidence: 99%

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A review of nucleation, growth and low temperature synthesis of diamond thin films

Das¹,

Singh²

2007

International Materials Reviews

149

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“…Optical emission spectra of argon plasmas in ICP discharges have generally been used to investigate the kinetics of the discharges [10] . Optical emission spectroscopy (OES) can also detect the emissions from the electronically excited species in the plasma [11] . OES is now widely used in many fields, including the analysis of new ceramic materials, determination of trace rare-earth elements, and analysis of spectrum superimposed interference [9] .…”

Section: Introductionmentioning

confidence: 99%

Optical Emission Spectroscopic Studies of ICP Ar Plasma

Ren

Zhang

et al. 2007

Plasma Sci. Technol.

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The ion line of 434.8 nm and atom line of 419.8 nm of Ar plasma produced by an inductively coupled plasma (ICP) were measured by optical emission spectroscopy and the influences from the working gas pressure, radio-frequency (RF) power and different positions in the discharge chamber on the line intensities were investigated in this study. It was found that the intensity of Ar atom line increased firstly and then saturated with the increase of the pressure. The line intensity of Ar+, on the other hand, reached a maximum value and then decreased along with the pressure. The intensity of the line in an RF discharge also demonstrated a jumping mode and a hysteresis phenomenon with the RF power. When the RF power increased to 400 W, the discharge jumped from the E-mode to the H-mode where the line intensity of Ar atom demonstrated a sudden increase, while the intensity of Ar+ ion only changed slightly. If the RF power decreased from a high value, e.g., 1000 W, the discharge would jump from the H-mode back to the E-mode at a power of 300 W. At this time the intensities of Ar and Ar+ lines would also decrease sharply. It was also noticed in this paper that the intensity of the ion line depended on the detective location in the chamber, namely at the bottom of the chamber the line was more intense than that in the middle of the chamber, but less intense than at the top, which is considered to be related to the capacitance coupling ability of the ICP plasma in different discharge areas.

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Optical properties of plasma species absorbed during diamond deposition on steel

Cited by 2 publications

References 17 publications

A review of nucleation, growth and low temperature synthesis of diamond thin films

A review of nucleation, growth and low temperature synthesis of diamond thin films

Optical Emission Spectroscopic Studies of ICP Ar Plasma

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