Optical properties of Si–N doped BaMgAl10O17:Eu2+, Mn2+ phosphors for plasma display panels

Liu, Bitao; Feng, Zhihai; Zhu, Ge; Wen, Yan; Xin, Shuangyu; Wang, Wenjie; Wang, Yuhua

doi:10.1016/j.jallcom.2011.04.011

Cited by 14 publications

(6 citation statements)

References 25 publications

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“…n = 1 or n = 1/2 means that the matrix has a direct or indirect band gap, respectively. [ 30 ] According to previous reports, BaMgAl 10 O 17 has an indirect band gap. [ 30 ] The calculated results demonstrate that the substitution of Ga 3+ did not change the band gap, and that the band gap values for the samples were sufficiently large to accommodate the energy level of the activator ions.…”

Section: Resultsmentioning

confidence: 97%

“…[30] According to previous reports, BaMgAl 10 O 17 has an indirect band gap. [30] The calculated results demonstrate that the substitution of Ga 3+ did not change the band gap, and that the band gap values for the samples were sufficiently large to accommodate the energy level of the activator ions. [31] Figure 4f shows how the replacement of Ga 3+ resulted in a red-shift and broadening of the spectrum.…”

Section: Photoluminescence Propertiesmentioning

confidence: 91%

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Crystal‐Field Engineering Control of an Ultraviolet–Visible‐Responsive Near‐Infrared‐Emitting Phosphor and Its Applications in Plant Growth, Night Vision, and NIR Spectroscopy Detection

Zhou

Wang

2022

Advanced Optical Materials

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Broadband near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) have many prospective applications in areas related to food inspection, health management, plant growth, and night vision, because NIR phosphors are critical components of the corresponding devices. Given the wide‐ranging applicability of the material, this study is designed to comprehensively evaluate a series of novel NIR phosphors: BaMgGaxAl10–xO17:Cr3+ (x = 0, 1, 2, 3). The ultra‐low‐temperature (4 K) fluorescence spectroscopy and decay curve results confirm that Cr3+ occupies the four lattice sites of Al3+ in the matrix. Additionally, the introduction of Ga3+ increases the full‐width at half‐maximum (FWHM) of the NIR spectrum from 100 to 300 nm without affecting the fluorescence efficiency; it also considerably increases spectral coverage. An experiment to evaluate the applicability of the novel NIR phosphors reveals that the sunlight‐converting film prepared by applying the material combination of BaMgGa3Al7O17:0.02Cr3+ is able to effectively promote the growth of Chlorella. In addition, the NIR pc‐LED with a BaMgGa3Al7O17:0.2Cr3+ basis and 395‐nm LED chip has been proven to be an excellent candidate for applications in NIR spectral detection and night‐vision technology.

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Section: Resultsmentioning

confidence: 97%

Section: Photoluminescence Propertiesmentioning

confidence: 91%

Crystal‐Field Engineering Control of an Ultraviolet–Visible‐Responsive Near‐Infrared‐Emitting Phosphor and Its Applications in Plant Growth, Night Vision, and NIR Spectroscopy Detection

Zhou

Wang

2022

Advanced Optical Materials

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“…Energy transfer from the host enables VUV-excited luminescence of Eu 2þ . [92] This makes BAM:Eu 2þ phosphor suitable for applications like plasma display panel (PDP), [93,94] scintillator, [95] and mercury-free fluorescent lamps. [96] Various codopants, such as Mg 2þ at the Al 3þ site, could improve the VUV excitation required for this application.…”

Section: Lamp Phosphorsmentioning

confidence: 99%

Luminescent Materials Based on Aluminates: A Review

Revankar

Gedekar²,

Moharil

2022

Physica Status Solidi (a)

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An aluminate is a compound containing an oxyanion of aluminum. Many aluminates are found in nature. A large number of phosphors that are used in various applications, such as scintillation detectors, optical thermometry, longlasting phosphorescence, solid-state lighting, solid-state lasers, upconversion, bioimaging, and plasma display panels, are based on aluminate formulae. This review focuses on the synthesis and characteristics of such phosphors. The conventional as well as novel methods of synthesizing these phosphors are reviewed. The emphasis on commercially important aluminate phosphors is discussed.

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“…针对目前 VUV 三基色发光材料在发光效率低、衰减时间长及稳定性差等方面不足, 课题组也对新图 8 掺杂以及未掺杂 Si 3 N 4 的 BAM:0.1Eu 2+ , 0.12Mn 2+ 在 147 nm 激发下的发射光谱 [14] 图 9 不同 Si 3 N 4 浓度掺杂下的 BAM:Eu 2+ , Mn 2+ 扫描电子显微镜图片 [14] (a) [21] http://engine.scichina.com/doi/10.1360/N092014-00271 掺的余辉初始亮度和时间均优于 Ce 3+ , Dy 3+ 单掺的样品. Sr 1.965 Al 2 SiO 7 :0.005Ce 3+ , 0.03Dy 3+ 的样品余辉时间可以持续 50 min [43] 在 Sr 2 MgSi 2 O 7 : Eu 2+ , Dy 3+ 中, 发现通过三掺 Ce 3+ 提高了余辉 [44] , 如图 [58,59] ;…”

Section: 新材料的开发unclassified

“…因此, 通过掺杂改性或者包覆等来改善 BAM 的发光性能成为研究 BAM 的热劣化机理重要手段. 对此, 课题组通过高温固相法在 BaMgAl 10 O 17 :Eu 2+ , Mn 2+ 荧光粉中进行了 Si-N 掺杂, 有效提高 BAM 的稳定性以及发光强度并获得多种形貌, 其发射光谱及扫描电子显微镜图片见图 8 和 9, 该种改进的荧光粉为提高 PDP 用荧光粉荧光效率提供了思路 [14] .…”

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