Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy

Mokerov, V. G.; Fedorov, Yu. V.; Guk, A. V.; Галиев, Г. Б.; Страхов, В. А.; Yaremenko, N. G.

doi:10.1134/1.1187521

Cited by 2 publications

(1 citation statement)

References 9 publications

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“…The peak E observed at energy near 1.372 eV is attributed to the V As -Si As transition, which involves the deep-donorshallow-acceptor complex transition [31][32][33] in Fig. 6(a).…”

Section: (B) It Can Be Observed That Compared To the Ga 2−mentioning

confidence: 99%

Low temperature photoluminescence study of GaAs defect states*

Huang

Shang

et al. 2020

Chinese Phys. B

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Low temperature (77 K) photoluminescence measurements have been performed on different GaAs substrates to evaluate the GaAs crystal quality. Several defect-related luminescence peaks have been observed, including 1.452 eV, 1.476 eV, 1.326 eV peaks deriving from 78 meV GaAs antisite defects, and 1.372 eV, 1.289 eV peaks resulting from As vacancy related defects. Changes in photoluminescence emission intensity and emission energy as a function of temperature and excitation power lead to the identification of the defect states. The luminescence mechanisms of the defect states were studied by photoluminescence spectroscopy and the growth quality of GaAs crystal was evaluated.

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“…The peak E observed at energy near 1.372 eV is attributed to the V As -Si As transition, which involves the deep-donorshallow-acceptor complex transition [31][32][33] in Fig. 6(a).…”

Section: (B) It Can Be Observed That Compared To the Ga 2−mentioning

confidence: 99%

Low temperature photoluminescence study of GaAs defect states*

Huang

Shang

et al. 2020

Chinese Phys. B

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Photoluminescence study on heavily donor and acceptor impurity doped GaAs layers grown by molecular-beam epitaxy

Islam

Jung

Noh

et al. 2009

Journal of Applied Physics

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Gallium arsenide layers doped with high concentrations of Be and Si by molecular-beam epitaxy are studied by photoluminescence (PL) spectroscopy. PL peaks from doped layers are observed at energies significantly lower than the band-gap of GaAs. The growth and doping conditions suggest that the origin of these peaks is different from that of low energy PL peaks, which were observed in earlier studies and attributed to impurity-vacancy complexes. The dependence of the peak energy on the temperature and the annealing is found to differ from that of the peaks attributed to impurity-vacancy complexes. On the basis of these observations, it is suggested that the low energy peaks are attributed to short range ordered arrangements of impurity ions. This possibility is examined by calculations of the PL spectra with models of pairs of acceptor and donor delta-doped layers and PL experiments of a superlattice of pairs of Be and Si delta-doped layers.

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Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy

Cited by 2 publications

References 9 publications

Low temperature photoluminescence study of GaAs defect states*

Low temperature photoluminescence study of GaAs defect states*

Photoluminescence study on heavily donor and acceptor impurity doped GaAs layers grown by molecular-beam epitaxy

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