Optical properties of textured V2O5/Si thin films deposited by reactive magnetron sputtering

Atuchin, V.V.; Ayupov, B. M.; Kochubey, V. A.; Pokrovsky, L.D.; Ramana, C. V.; Rumiantsev, Yu.M.

doi:10.1016/j.optmat.2007.05.040

Cited by 37 publications

(14 citation statements)

References 18 publications

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“…However, the scarcities of the reports are found in particular with the optical properties of V 2 O 5 /Si system [14,15,16] though the systematic and in-depth studies on optical properties of V 2 O 5 are available on transparent glass and quartz substrates [9,12,13,16].…”

Section: Introductionmentioning

confidence: 99%

Low reflectance sputtered vanadium oxide thin films on silicon

Akinlabi

Dey

Rangappa

et al. 2016

Infrared Physics & Technology

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Section: Introductionmentioning

confidence: 99%

Low reflectance sputtered vanadium oxide thin films on silicon

Akinlabi

Dey

Rangappa

et al. 2016

Infrared Physics & Technology

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“…1-4 V 2 O 5 exists in several polymorphs known as a, b, c, and d-V 2 O 5 . 15,20 The stable a-V 2 O 5 structure was recorded in a number of publications; [21][22][23][24][25][26] however, some reports mentioned growth of unstable b-V 2 O 5 phases. 5 c-V 2 O 5 is a metastable phase and can be obtained at atmospheric pressure by a reverse micelle technique 6 or deintercalation of Li from c-Li V 2 O 5 , 7 showing the back transition to a-V 2 O 5 at 340 C. b and d-V 2 O 5 are also metastable phases and can be modified from a-V 2 O 5 at high temperature and under high pressure by crystallographic shearing along c-axis.…”

Section: Introductionmentioning

confidence: 99%

Crystal structure development of vanadium oxide thin films deposited by a magnetron sputtering technique

Asadov

Mukhtar

Gao

2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inMicrostructural evolution of thin film vanadium oxide prepared by pulsed-direct current magnetron sputtering J. Appl. Phys. 112, 093504 (2012); 10.1063/1.4759255 Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering Appl. Phys. Lett. 100, 262108 (2012); 10.1063/1.4731240 Process-structure-property correlations in pulsed dc reactive magnetron sputtered vanadium oxide thin films J. Vac. Sci. Technol. A 29, 061504 (2011); 10.1116/1.3636372 Growth, electrical, and optical properties of nanocrystalline VO 2 (011) thin films prepared by thermal oxidation of magnetron sputtered vanadium films J. Vac. Sci. Technol. A 28, 595 (2010); 10.1116/1.3443562Vanadium oxide thin films for bolometric applications deposited by reactive pulsed dc sputtering Crystal structure of vanadium oxide films with different thickness, deposited on glass and F:SnO 2 coated (FTO) substrates, was studied. It was found that all the films annealed at 450 C developed a metastable b-V 2 O 5 monoclinic crystal structure, represented by crystals of up to 100 nm. At higher temperatures, the original crystals of relatively thick films of 400 nm on the glass substrate first increased in size and improved their crystal structure symmetry from the monoclinic to tetragonal, then gradually intergrew into spectacular superstructures of crystal "leaves" (500 C) and "needles" (550 C). Thin films of 130 nm exhibited a similar crystallization processes but at a higher rate. It was found that the FTO substrate supported the slowest crystal growth dynamics with annealing temperature. The original crystals did not grow in size and retained their low b monoclinic symmetry in the whole temperature range up to 550 C. The superstructure appeared around film imperfections in the form of plate macroscopic crystals with improved tetragonal symmetry, and it covered only one third of the film surface. The metastable b phase growth and its development were discussed and explained in terms of the combined effect of high crystal/substrate surface tension and crystal surface energy.

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“…Об-разец расположен под углом 45° к потоку частиц песка [14]. Во всех экспериментах использовался один и тот же объем песка, поэтому время всех экспериментов было одинаковым и составляло около 10 мин.…”

Section: экспериментальная частьunclassified

“…Идея метода близка к стандартному методу испытаний лакокрасочных покрытий по ГОСТ 20811 -75. Подобная схема испытаний применялась для исследования опти-ческих оксидных покрытий [3], а описанная выше уста-новка использована для определения газоабразивной износостойкости пленок V 2 O 5 [14].…”

Section: экспериментальная частьunclassified

“…Для решения данной задачи могут быть использованы и спектры от-ражения. Особенно информативны спектры диффузной компоненты отраженного света при измерениях в фото-метрическом шаре (интегрирующей сфере) с ловушкой зеркального отражения [14]. Тем не менее, для предва-рительных измерений можно использовать устройства на основе зондов отражения / обратного рассеяния, из-меряющие полное отражение.…”

Section: результаты и их обсуждениеunclassified

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Gas-abrasive wear resistance of silicon and boron carbonitride films

Shayapov¹,

Sulyaeva²,

Rumyantsev³

et al. 2017

LoM

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Gas-abrasive wear resistance of silicon carbonitride SiC x N y H z and boron carbonitride BC x N y films obtained by chemical vapor deposition (CVD) method was studied. Wear resistance tests were carried out in a flux of sand particles falling on the samples under the gravity action. Scanning electron microscopy, scanning probe microscopy, ellipsometry and spectrophotometry were used to detect the surface modifications occurred during this treatment. In addition, early published data on the physical and chemical properties of the films are involved for interpreting the results of gas-abrasive tests. The SiC x N y H z films were obtained by plasma-enhanced CVD from the mixture of hexamethyldisilazane vapor and helium at deposition temperatures 100 -800°C and pressure 0.05 Torr. It was found that gas-abrasive wear resistance of the films increased with the deposition temperature due to the changes in a chemical composition of the films towards the hard SiC x N y material. BC x N y films were synthesized by low-pressure CVD from triethylamine borane vapor and its mixture with ammonia (ratio of partial pressures 1 : 1). Deposition temperature was 700°C. There is a difference in destruction mechanisms of the films deposited from these compositions of the initial gas mixture. The surface of films synthesized from triethylamine borane vapor and treated with sand particles shows destroyed and undamaged areas similar to the SiC x N y H z films. When ammonia is added to the initial gas mixture, the surface of the treated films acquires a specific appearance with lots of scratches. These changes are associated with a decrease in the hardness and Young's modulus of the BC x N y films due to the nitrogen concentration enhancement.

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Optical properties of textured V2O5/Si thin films deposited by reactive magnetron sputtering

Cited by 37 publications

References 18 publications

Low reflectance sputtered vanadium oxide thin films on silicon

Low reflectance sputtered vanadium oxide thin films on silicon

Crystal structure development of vanadium oxide thin films deposited by a magnetron sputtering technique

Gas-abrasive wear resistance of silicon and boron carbonitride films

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