Optical properties of the sulfur-related isoelectronic bound excitons in Si

Sulphur doped silicon light emitting diodes

“…The EL signal exhibited the same temperature behaviour as the PL signal which persisted up to ~150 K. They found an external efficiency associated with the EL o f 0.2-0.5%. Beckett et al [57] identified zero phonon lines from two luminescence systems, which they labelled as Sa and Sb, each of which displayed two transitions, one forbidden but dominant at low temperatures (968.2 meV for A, 812 meV for B) and a second higher energy one at 977 meV for A and at 821. A similar study from M. Singh et al [58] identified from the decay o f iso electronic bound excitons (IBEs) zero phonon lines at 812.04 meV and 968.30 meV, which they labelled as Sb° and Sa° respectively at T<10 K. At higher temperatures they identified higher energy zero-phonon lines at 822 meV and 977.1 meV, which they labelled as Sb* and Sa* respectively (Figure 2.14).…”

Enhanced near-infrared photoluminescence from isoelectronic luminescent centers in sulfur-implanted silicon with copper or silver coimplantation

“…[7][8][9][10][11] However, there were no new improved experimental results on highefficiency luminescence from sulfur-related isoelectronic centers in silicon for nearly two decades, until the dislocation loop was introduced to improve the luminescence of sulfurimplanted silicon by Homewood and co-workers in 2005. 12,13 It is difficult to perform moderate annealing for the formation of Ohmic contacts in devices without destroying the luminescence capability because the luminescence of the quenched samples will, in general, be completely quenched after annealing at temperatures higher than 200°C.…”

“…This impurity atom was assumed to be copper. [7][8][9][10][11] Surprisingly, no intentional doping with copper atoms has been employed to see if copper codoping can increase luminescence from sulfurdoped silicon. In this work, we have achieved strongly enhanced light emission from rapid thermally quenched sulfurdoped silicon into which additional copper or silver ions were coimplanted.…”

On the Symmetry of the Sulfur Pair-Related Defect in Silicon

“…Recently a sulfur-related complex defect in silicon has attracted much attention due to its interesting configurational metastability [1][2][3]. Two photoluminescence spectra SA and SB, corresponding to two different geometric configurations of this complex dominate at low temperatures (T < 10 K) with zero-phonon lines SÁ and SB at 0.968 eV and at 0.812 eV, respectively.…”

“…Two photoluminescence spectra SA and SB, corresponding to two different geometric configurations of this complex dominate at low temperatures (T < 10 K) with zero-phonon lines SÁ and SB at 0.968 eV and at 0.812 eV, respectively. It has been shown [2] that these lines originate from photo-excited triplet states of an exciton bound to this defect in its neutral charge state. The first step in analyzing metastability is, of course, determination of the point group symmetry of a given defect.…”