Optical properties of thermally stabilized ion implantation amorphized silicon

Fried, M.; Lohner, T.; Jároli, E.; Vízkelethy, G.; Kótai, E.; Gyulai, J.; Bíró, A.; Adam, Jean-uc; Somogyi, M.; Kerkow, H.

doi:10.1016/s0168-583x(87)80115-5

Cited by 8 publications

(2 citation statements)

References 16 publications

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“…This experiment gives evidence for the existence of different amorphous phases: the usual one, recoverable by solid phase epitaxy (SPE) at 500~ another one which is not. This fact is not surprising because in the literature some other papers also suggested this possibility (19)(20)(21). To interpret the observed regrowth behavior we assume that: (i) the low fluence implant does not produce significant atom mixing, and (it) during recrystallization the crystal phase does not incorporate interstitials in excess to the ones allowed by the solid solubility and those present in extended lattice defects.…”

Section: Experimental Observationsmentioning

confidence: 68%

The Amorphization and Subsequent Recovery of In Situ Annealed As+ Implanted Silicon

Claeys¹,

Bender²,

Cerofolini³

et al. 1989

J. Electrochem. Soc.

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Silicon layers, damaged by heavy As + implantation in self-anneal conditions and subsequently amorphized by a second low current implant at room temperature, are studied by channeling Rutherford backscattering spectroscopy, and transmission and high resolution electron microscopy. Moderate temperature anneals are investigated systematically. For some anneal conditions, the amorphized layer leaves a thin continuous buried amorphous layer, thus giving an indication that a different structure from the one which reverts to the crystal by so]id phase epitaxy may exist. Special attention is given to the hypothesis that the buried amorphous layer is obtained by a lattice collapse due to a strong local excess of self-interstitials.

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Section: Experimental Observationsmentioning

confidence: 68%

The Amorphization and Subsequent Recovery of In Situ Annealed As+ Implanted Silicon

Claeys¹,

Bender²,

Cerofolini³

et al. 1989

J. Electrochem. Soc.

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“…Null-seeking ellipsometers were used for this work in the polarizer, compensator, sample analyser (PCSA) configuration. The methodological considerations concerning the single-wavelength multiple angle of incidence ELL analysis are summarized by Fried et al [11]. In figure 3, curves have been calculated for an angle of incidence of 70 • and the reported experimental dot indicates an alumina thickness equal to 11 nm.…”

Section: Ellipsometry Of Al 2 O 3 Filmsmentioning

confidence: 99%

Ellipsometry of Al₂O₃thin films deposited on Si and InP

Robert

Bideux

Gruzza

et al. 1997

Semicond. Sci. Technol.

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Al 2 O 3 thin films, possessing potential for MIS electronic applications, have been deposited on clean Si and InP surfaces by evaporating powder from a graphite cell heated by electron bombardment. The build up of the films was monitored by Auger electron spectroscopy (AES).Continuous, amorphous films were also prepared on microgrids, for TEM studies. The film thickness was measured using multiple angle of incidence (66-72 • ) and 70 • angle ellipsometry using a 633 nm laser line. Calibration curves have been calculated for n = 1.61-1.77 limits for Al 2 O 3 and various substrates. They were considerably affected by the substrate optical constants. Evaluation of ellipsometric data resulted in typical thickness values of 5-10 nm as confirmed with cross-sectional TEM.

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