Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures

Abstract

Abstract. The comparative analysis of optical characteristics inherent to Er 2 O 3 /SiC and Er 2 O 3 /por-SiC/SiC structures has been performed. It has been shown that, regardless the substrate on which the Er 2 O 3 film is formed, an increase in the rapid thermal annealing time leads to an improvement in the oxide film composition, with the composition of the Er 2 O 3 film approaching to the stoichiometric one. At the same time, introduction of an additional porous SiC layer leads to a blurring of the oxide film/substrate interface and broadening the photoluminescence band measured in this structure.

Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrate

“…As seen from Fig. 3, an increase in the RTA time also leads to an increase in optical transmission within the spectral range 400…800 nm, as well as in the Er 2 O 3 /por-SiC/SiC [20,21] and TiO 2 /por-SiC/SiC [18,19] structures. The growth of optical transmission for oxidized dysprosium films, as well as a decrease in the thickness of the transition layer at the 'oxide filmsubstrate' interface, is most likely caused by the same reasons, namely: destruction of dysprosium silicates at the interface [13], which correlates with the Auger spectroscopy data.…”

“…2, the chemical composition of the transition areas 'oxide film -substrate' differs from that in the oxide bulk. An increase in the RTA time, like to the case of erbium and titanium oxides formation [18][19][20][21], leads to formation of a sharper interface 'oxide film -substrate'. This formation of the sharper interface 'oxide film -substrate' with increasing the RTA time is most likely due to the fact that, with the RTA time increasing, dysprosium silicates [13] formed in the intermediate layer 'oxide film -porous layer' break down.…”

Comparative characteristics of TiO2(Er2O3, Dy2O3)/por-SiC/SiC heterostructures (Review)

“…As it was shown in [12,13], the use of rapid thermal annealing (RTA) makes it possible to reduce the thickness of the oxide film/substrate interface in the TiO 2 (Er 2 O 3 , Gd 2 O 3 )/SiC structures. RTA has a similar effect on the thickness of the interface in the TiO 2 (Er 2 O 3 , Dy 2 O 3 )/por-SiC/SiC structures [14][15][16]. Fig.…”

“…Fig. 1 shows the atomic profiles of the TiO 2 /por-SiC/SiC, Er 2 O 3 /por-SiC/SiC and Dy O 3 /por-SiC/SiC structures near the interface during various heat processing [14][15][16]. For the TiO 2 /por-SiC/SiC structures, qualitative estimations based on experimental data on Auger profiling [15] have shown that vacuum heat processing of thin metal titanium films deposited on a por-SiC/SiC substrate initiated the appearance of at least a two-layer system: the upper layer was formed by the TiO phase, under which there was a more extended area with a phase composition close to TiO 2 .…”

“…1, the chemical composition of the transition areas "oxide film/substrate" is different from that of the bulk of oxides. An increase in the time of RTA leads to formation of a sharper interface "oxide film/substrate" [13,14,16,19,20].…”