Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters

Abstract

We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet (374 nm) to green (536 nm) with InN quantum well thickness increasing from 1 monolayer to 2 monolayers, while the overlap of electron-hole wave function remains at a high level (larger than 90%). Increase of In content in InGaN matrix provides a better approach to longer wavelength emission, which only reduces the spontaneous emission rate slightly compared with the case of increasing In content of the conventional InGaN quantum well. Also, the transparency carrier density derived from gain spectrum is of the same order as that in the conventional blue laser diode. Our study provides skillful design on the development of novel structure InN-based light emitting diodes as well as laser diodes.

Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

“…The transition between these levels plays an important role in the radiative recombination. [17,18] Figures 5(a QW in the prestrained sample is higher than that of the control sample. The enhanced overlaps improve the radiative recombination rate and lead to a higher emission intensity, which is consistent with the fact that the EL intensity of the prestrained sample at the injection current of 20 mA is increased by 65%.…”