Refractive index microstructures, which can be written by multiphoton absorption with femtosecond lasers, have many applications. Here we present a directional phase-unwrapping algorithm with phase-shifting technique and apply it to the metrology of hydrogel microstructures. A staircase phase-unwrapping algorithm is demonstrated. This fast quality-guided path phase-unwrapping applies well to situations that are geometrically well defined and is quite tolerant of phase noise. To achieve precise very small phase shifts, we also present a slant angle technique on a DC servo stage along with phase shift measurement, allowing us to achieve 6.5 nm step sizes.
In this paper, we studied the effects of subsurface femtosecond laser micromachining on surface morphology in hydrogels. Depending on material properties and writing conditions, we found surface bumps when materials were hydrated, and trenches when they were dehydrated, which can be attributed to the localized change in water concentration. Such wavy surfaces by laser-induced refractive index change are not desirable in clinical contact lenses. Therefore, the minimization of surface bumps is necessary to ensure the user eye wearing comfort. In addition, we examined the optical effects of the surface features using interferometry and the surface morphology using profilometry. Finally, we proposed a simplified mechanical model based on localized swelling.
We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet (374 nm) to green (536 nm) with InN quantum well thickness increasing from 1 monolayer to 2 monolayers, while the overlap of electron-hole wave function remains at a high level (larger than 90%). Increase of In content in InGaN matrix provides a better approach to longer wavelength emission, which only reduces the spontaneous emission rate slightly compared with the case of increasing In content of the conventional InGaN quantum well. Also, the transparency carrier density derived from gain spectrum is of the same order as that in the conventional blue laser diode. Our study provides skillful design on the development of novel structure InN-based light emitting diodes as well as laser diodes.
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