Optical Properties of (Zn, Mn) and (Cd, Mn) Chalcogenide Mixed Crystals and Superlattices

Goede, O.; Heimbrodt, W.

doi:10.1002/pssb.2221460102

Cited by 272 publications

(82 citation statements)

References 220 publications

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“…In all recorded spectra the main luminescence line is inhomogeneous and of considerably asymmetric shape. We ascribe the emission centres at lower energies to the tails of the density of (2) and Vexc(B) (3). FWHM broadening due to magnetic fluctuations determined by variance subtraction (4) and by direct subtraction (5).…”

Section: Experiments and Resultsmentioning

confidence: 99%

“…In that case it is assumed that Landau and intrinsic spin splittings are considerably smaller and the exchangeinteraction-induced term in band splitting prevails. In this approximation magnetic-field-induced splittings of conduction and valence band edges are described by ∆E c = −xN 0 α S z m j (m j = ±1/2) and [2,3]. As result, the conduction band at Γ 6 point splits into two subbands separated by 6|A ex | (A ex = (1/6)xN 0 α S z ) and the valence band at Γ 8 point into four subbands situated equidistantly with the splitting of 2|B ex | (B ex = (1/6)xN 0 β S z ) [3,4].…”

Section: Spectral Position Of Luminescence Maximum In Magnetic Fieldmentioning

confidence: 99%

“…Deviations of luminescent transition energy values in Cd 0.7 Mn 0.3 Te spectra from the short s, p − d exchange theory approximation at magnetic field 0 < B < 3 T are comparable (∼1.2 meV). It is reasonable to assume that possible reasons of these discrepancies is the uncertainty in N 0 α determination at low magnetic fields and existence of non-vanishing energy splitting of ∼1 meV in zero magnetic field [2].…”

Section: Spectral Position Of Luminescence Maximum In Magnetic Fieldmentioning

confidence: 99%

“…Exchange interaction of Mn 2+ magnetic moments with conduction and valence band electrons result in large Zeeman splitting of band states, magnetic polaron formation, and other large amplitude magneto-optical phenomena, such as magnetic-field-induced circular birefringence (Faraday effect) and linear birefringence (Voigt effect) [1][2][3]. Investigation of semimagnetic semiconductors (SMSCs) goes on for more than several decades and is important both from theoretical and application point of view: due to investigations of s, p − d exchange interaction and possibility to change the band gap value by changing the concentration of magnetic component and applying magnetic field.…”

Section: Introductionmentioning

confidence: 99%

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Luminescence of Cd_0.7Mn_0.3Te crystals in magnetic field: Linewidth, Landau quantization, and carrier effective mass

Barauskaitė¹,

Brazis²,

Ivanov³

et al. 2009

Lithuanian J. Phys.

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Cd0.7Mn0.3Te crystal photoluminescence is studied in magnetic field up to 7 T in Voigt geometry at 1.6-1.7 K temperature. The range of magnetic field where the approximation of effective band gap narrowing by the s, p − d exchange-interactioninduced term correctly describes experimental results is discussed. Luminescence linewidth (FWHM) broadening due to composition disorder and magnetization fluctuations is evaluated. Functional dependence on magnetic field of magnetic part in broadening, the FWHM(B)magn., is determined. From the patterns of Landau quantization in luminescence spectra the carrier effective mass value m * e = 0.104 is calculated and its increase in magnetic field is obtained. Contribution of nonparabolicity and band coupling effects is evaluated in the observed carrier effective mass growth effect.

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Section: Experiments and Resultsmentioning

confidence: 99%

Section: Spectral Position Of Luminescence Maximum In Magnetic Fieldmentioning

confidence: 99%

Section: Spectral Position Of Luminescence Maximum In Magnetic Fieldmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Luminescence of Cd_0.7Mn_0.3Te crystals in magnetic field: Linewidth, Landau quantization, and carrier effective mass

Barauskaitė¹,

Brazis²,

Ivanov³

et al. 2009

Lithuanian J. Phys.

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“…Zn 1−x Mn x Te, Cd 1−x Mn x Te and Zn 1−x Mn x Se). The most prominent feature of these Mn-containing DMS materials is the s,p-d exchange interaction between the S = 5/2 d-electrons of the Mn 2+ ions and the free charge carriers in the conduction and valence bands, which leads to magnetic splittings at low temperatures of the order of 100 meV (for a review of these properties see [1,2]). In recent years, heterostructures such as multiple quantum wells (MQWs) containing DMS materials have been grown very sucessfully by several groups.…”

Section: Introductionmentioning

confidence: 99%

Comparison of multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity

Klar

Wolverson

Ashenford

et al. 1996

Semicond. Sci. Technol.

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Large-area high density patterns of quantum dots with a diameter of 200 nm have been prepared from a series of four Zn0.93Mn0.07Te/ZnTe multiple quantum well structures of different well width (40Å, 60Å, 80Å and 100Å) by electron beam lithography followed by Ar + -ion beam etching. Below-bandgap photomodulated reflectivity spectra of the quantum dot samples and the parent heterostructures were then recorded at 10 K and the spectra were fitted to extract the linewidths and the energy positions of the excitonic transitions in each sample. The fitted results are compared to calculations of the transition energies in which the different strain states in the samples are taken into account. We show that the main effect of the nanofabrication process is a change in the strain state of the quantum dot samples compared to the parent heterostructures. The quantum dot pillars turn out to be freestanding, whereas the heterostructures are in a good approximation strained to the ZnTe lattice constant. The lateral size of the dots is such that extra confinement effects are not expected or observed.

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Ordered Arrays of II/VI Diluted Magnetic Semiconductor Quantum Wires: Formation within Mesoporous MCM-41 Silica

Brieler¹,

Fröba²,

Chen³

et al. 2002

Chem. Eur. J.

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We present a novel way of synthesising highly ordered arrays of hollow Cd(1-x)Mn(x)S quantum wires with lateral dimensions of 3-4 nm separated by 1-2 nm SiO2 barriers by forming Cd(1-x)Mn(x)S (0 < or = x < or = 1) semiconductors inside the pore system of mesoporous MCM-41 SiO2 host structures. X-ray diffraction and transmission electron microscopy (TEM) studies reveal the hexagonal symmetry of these arrays (space group p6m) and confirm the high degree of order. Physisorption measurements show the filling of the pores of the MCM-41 SiO2. The X-ray absorption near-edge structure (XANES), extended X-ray absorption fine structure (EXAFS), electron paramagentic resonance (EPR), and Raman studies confirm the good crystalline quality of the incorporated (Cd,Mn)S guest. The effects of reducing the lateral dimensions on the magnetic and electronic properties of the diluted magnetic semiconductor were studied by photoluminescence (PL) and PL excitation spectroscopy and by SQUID and EPR measurements in the temperature range 2-400 K. Due to the quantum confinement of the excitons in the wires, an increase of about 200 meV in the direct band gap was observed. In addition, the p-d hybridisation-related bowing of the band gap as a function of Mn concentration in the wires is much stronger than in the bulk. This effect is related to the increase in the band gap due to quantum confinement, which shifts the p-like valence band edge closer to the 3d-related states of Mn in the valence band. Thus, the p-d hybridisation and the strength of the band gap bowing are increased. Compared to bulk (II,Mn)VI compounds, antiferromagnetic coupling between the magnetic moments of the Mn2+ ions is weaker. For the samples with high Mn concentrations (x > 0.8) this leads to a suppression of the phase transition of the Mn system from paramagnetic to antiferromagnetic. This effect can be explained by the fact that the lateral dimensions of the wires are smaller than the magnetic length scale of the antiferromagnetic ordering.

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Optical Properties of (Zn, Mn) and (Cd, Mn) Chalcogenide Mixed Crystals and Superlattices

Cited by 272 publications

References 220 publications

Luminescence of Cd_0.7Mn_0.3Te crystals in magnetic field: Linewidth, Landau quantization, and carrier effective mass

Luminescence of Cd_0.7Mn_0.3Te crystals in magnetic field: Linewidth, Landau quantization, and carrier effective mass

Comparison of multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity

Ordered Arrays of II/VI Diluted Magnetic Semiconductor Quantum Wires: Formation within Mesoporous MCM-41 Silica

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Optical Properties of (Zn, Mn) and (Cd, Mn) Chalcogenide Mixed Crystals and Superlattices

Cited by 272 publications

References 220 publications

Luminescence of Cd0.7Mn0.3Te crystals in magnetic field: Linewidth, Landau quantization, and carrier effective mass

Luminescence of Cd0.7Mn0.3Te crystals in magnetic field: Linewidth, Landau quantization, and carrier effective mass

Comparison of multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity

Ordered Arrays of II/VI Diluted Magnetic Semiconductor Quantum Wires: Formation within Mesoporous MCM-41 Silica

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Resources

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Luminescence of Cd_0.7Mn_0.3Te crystals in magnetic field: Linewidth, Landau quantization, and carrier effective mass

Luminescence of Cd_0.7Mn_0.3Te crystals in magnetic field: Linewidth, Landau quantization, and carrier effective mass