OPTICAL PROPERTIES OF ZnSe:V CRYSTALS

Determination of the ionization energy of vanadium levels in zinc selenide

“…Very often this energy is determined by comparing the experimental spectra of impurity absorption with those obtained using the known Lucovsky formula [2]. In this study, the problem is solved for the V impurity in ZnSe, the implantation of which in a crystal causes a significant increase in the band edge emission efficiency at 300 K [3].Doping was carried out by the diffusion of V into ZnSe single crystalline substrates, 4 × 4 × 1 mm in size, in a sealed quartz ampoule evacuated to 10 -4 Torr. It should be noted that the reasonably high diffusivity of vanadium in zinc selenide (D ≈ 5 × 10 -8 cm 2 /s at T = 1500 K [4]) ensures complete bulk doping of the sub strates over 2-4 h. In this case, the surface of samples remains smooth and requires no additional treatment for carrying out optical investigations.…”

“…Very often this energy is determined by comparing the experimental spectra of impurity absorption with those obtained using the known Lucovsky formula [2]. In this study, the problem is solved for the V impurity in ZnSe, the implantation of which in a crystal causes a significant increase in the band edge emission efficiency at 300 K [3].…”