Optical property of the near band-edge transitions in rhenium disulfide and diselenide

Ho, Ching‐Hwa; Huang, Chuanqi

doi:10.1016/j.jallcom.2004.04.011

Cited by 52 publications

(60 citation statements)

References 20 publications

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“…t 2g to 5d t * 2g and to anti-bonding chalcogen p and σ states 45 . In Table II The inclusion of e-h interactions does not essentially change the anisotropic optical response.…”

Section: Anisotropic Excitonmentioning

confidence: 99%

Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted1Tdiamond-chain structuresReS2andReSe2
Zhong
¹
,
Gao
²
,
Shi
³

et al. 2015
Phys. Rev. B
144
11
87
0
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We report many-body perturbation theory calculations of excited-state properties of distorted 1-T diamond-chain monolayer rhenium disulfide (ReS 2 ) and diselenide (ReSe 2 ). Electronic selfenergy substantially enhances their quasiparticle band gaps and, surprisingly, converts monolayer ReSe 2 to a direct-gap semiconductor, which was, however, regarded to be an indirect one by density-functional-theory calculations. Their optical absorption spectra are dictated by strongly bound excitons. Unlike hexagonal structures, the lowest-energy bright exciton of distorted 1-T ReS 2 exhibits a perfect figure-8 shape polarization dependence but those of ReSe 2 only exhibit a partial polarization dependence, which results from two nearly-degenerated bright excitons whose polarization preferences are not aligned. Our first-principles calculations are in excellent agreement with experiments and pave the way for optoelectronic applications. 1

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“…t 2g to 5d t * 2g and to anti-bonding chalcogen p and σ states 45 . In Table II The inclusion of e-h interactions does not essentially change the anisotropic optical response.…”

Section: Anisotropic Excitonmentioning

confidence: 99%

Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted1Tdiamond-chain structuresReS2andReSe2
Zhong
¹
,
Gao
²
,
Shi
³

et al. 2015
Phys. Rev. B
144
11
87
0
View full text Add to dashboard Cite

show abstract

“…The metal-metal bonds are responsible for creating a superlattice structure of rhenium chains, indicated by a black double arrow in Figure 1a. These chains distort the monolayer crystal from the more symmetric 1T structure 2,21,22 . Experimentally, crystals synthesized by vapor transport cleave with welldefined edges parallel to the rhenium chains, typically denoted as the b-axis, providing a rapid method of crystal orientation identification convenient for studying the anisotropic optical and electrical properties 16 .…”

mentioning

confidence: 99%

In-Plane Anisotropy in Mono- and Few-Layer ReS₂ Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy

et al. 2015

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Rhenium disulfide (ReS2) is a semiconducting layered transition metal dichalcogenide that exhibits a stable distorted 1T phase. The reduced symmetry of this system leads to in-plane anisotropy in various material properties. Here, we demonstrate the strong anisotropy in the Raman scattering response for linearly polarized excitation. Polarized Raman scattering is shown to permit a determination of the crystallographic orientation of ReS2 through comparison with direct structural analysis by scanning transmission electron microscopy (STEM). Analysis of the frequency difference of appropriate Raman modes is also shown to provide a means of precisely determining layer thickness up to four layers.

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“…12,13 The weak interlayer interactions lead to the situation that bulk material behaves like a monolayer. For ReS 2 , it was shown that the direct band gap, Raman spectra, and photoluminescence spectra vary slightly with increasing the number of layers, 14 which is in contrast to other TMDCs where crossover from indirect to direct band gap occurs with decreasing the number of layers from bulk to monolayer.…”

mentioning

confidence: 99%

Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets

Taube

Łapińska

Judek

et al. 2015

Applied Physics Letters

115

101

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Transition metal dichalcogenides (TMDCs) are attractive for variety of nanoscale electronics and optoelectronics devices due to their unique properties. Despite growing progress in the research field of TMDCs, many of their properties are still unknown. In this letter, we report measurements of Raman spectra of rhenium diselenide (ReSe2) and tin diselenide (SnSe2) layered semiconductor nanosheets as a function of temperature (70–400 K). We analyze the temperature dependence of the positions of eight ReSe2 modes and SnSe2 A1g mode. All observed Raman mode shifts exhibit nonlinear temperature dependence at low temperatures which is explained by optical phonon decay process into two or three acoustics phonons. The first order temperature coefficients (χ), determined for high temperatures, of rhenium diselenide Raman modes are in the range between −0.0033 and −0.0118 cm−1/K, whereas χ of tin diselenide A1g mode was −0.0129 cm−1/K. Our findings are useful for further analysis of phonon and thermal properties of these dichalcogenide layered semiconductors.

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Optical property of the near band-edge transitions in rhenium disulfide and diselenide

Cited by 52 publications

References 20 publications

Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted1Tdiamond-chain structuresReS2andReSe2
Zhong
¹
,
Gao
²
,
Shi
³

et al. 2015
Phys. Rev. B
144
11
87
0
View full text Add to dashboard Cite

Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted1Tdiamond-chain structuresReS2andReSe2
Zhong
¹
,
Gao
²
,
Shi
³

et al. 2015
Phys. Rev. B
144
11
87
0
View full text Add to dashboard Cite

In-Plane Anisotropy in Mono- and Few-Layer ReS₂ Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy

Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets

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Optical property of the near band-edge transitions in rhenium disulfide and diselenide

Cited by 52 publications

References 20 publications

Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted1Tdiamond-chain structuresReS2andReSe2Zhong1, Gao2, Shi3 et al. 2015Phys. Rev. B14411870View full textAdd to dashboardCite

Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted1Tdiamond-chain structuresReS2andReSe2Zhong1, Gao2, Shi3 et al. 2015Phys. Rev. B14411870View full textAdd to dashboardCite

In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy

Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets

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Product

Resources

About

Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted1Tdiamond-chain structuresReS2andReSe2
Zhong
¹
,
Gao
²
,
Shi
³

et al. 2015
Phys. Rev. B
144
11
87
0
View full text Add to dashboard Cite

Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted1Tdiamond-chain structuresReS2andReSe2
Zhong
¹
,
Gao
²
,
Shi
³

et al. 2015
Phys. Rev. B
144
11
87
0
View full text Add to dashboard Cite

In-Plane Anisotropy in Mono- and Few-Layer ReS₂ Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy