Optical rectification for terahertz generation

Lee, Cameron C.; Lewis, R. A.

doi:10.1002/pssc.201084105

Cited by 1 publication

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“…Due to lattice symmetry the chalcopyrite (012) plane (equivalent to the zincblende (011) plane) is expected to show similar behavior to that of the (110) plane. Also, in zincblende crystals the {112} planes shows equal efficiency for optical rectification to the {110} planes [111]; thus, the equivalent chalcopyrite (114) plane is also of interest. Predictive analysis is therefore performed for the (012) and (114) chalcopyrite planes.…”

Section: Predictionsmentioning

confidence: 99%

Chalcopyrite Semiconductors as Sources for Terahertz Spectroscopy

Rowley¹

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This dissertation summarizes a first effort to address the suitability of chalcopyrite structured semiconductors for efficient and broadband terahertz (THz) pulse emission by optical rectification. The experiments demonstrate that ZnGeP 2 , a chalcopyrite semiconductor showing improved growth quality in recent decades [1,2], is a promising source for THz spectroscopy while also addressing general fundamental questions concerning the nonlinear generation process in chalcopyrite semiconductors. Beyond ZnGeP 2 , the potential of other chalcopyrite structured semiconductors for THz emission is examined in the context of calculated phase-matching characteristics, onset pump wavelength of multiphoton absorption, and tabulated second-order nonlinear coefficients. Based on these, CdGeP 2 is determined to show particular promise among semiconductors as a THz source when pumped at or near the fiber laser line of 1.55 μm. The orientation dependence of THz optical rectification efficiency is examined in tetragonal birefringent ZnGeP 2 , compared to that of cubic GaP, and modeled based on the second-order nonlinear tensor, while accounting for birefringence. These results demonstrate the significant effects of birefringence on THz emission efficiency while defining the most efficient orientations for generation and can be generalized to other chalcopyrite semiconductors; the general approach is applicable to other uniaxial birefringent crystals. Experimental mapping of generated THz pulses is presented over a broad pump tuning range (1120-2480 nm) in 3 mm thick ZnGeP 2 crystals. This mapping, for two distinct and efficient orientations, demonstrates the moderate angle tunability of phase mismatch achievable in chalcopyrite crystals; the data also continuously demonstrate the effects of phase mismatch on the temporal and spectral THz pulse waveform. Finally, pump-intensity dependence of emission is presented for three crystal lengths, showing the effects of near-infrared nonlinear optical absorption and THz free-carrier absorption. Measurements, modeling, and calculation of characteristic lengths provide insight into the upper limit of pulse intensity and crystal length for generation of intense terahertz pulses without detriment to the bandwidth. Direct comparison of generation efficiency from GaP and ZnGeP 2 is also measured for reference.

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Section: Predictionsmentioning

confidence: 99%

Chalcopyrite Semiconductors as Sources for Terahertz Spectroscopy

Rowley¹

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Optical rectification for terahertz generation

Cited by 1 publication

References 8 publications

Chalcopyrite Semiconductors as Sources for Terahertz Spectroscopy

Chalcopyrite Semiconductors as Sources for Terahertz Spectroscopy

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