Optical responses of InGaP/GaAs/InGaAs P -channeldoubleheterojunction pseudomorphic MODFET

Structure and electrochemical behaviour of LiNi0.4Mn0.4Co0.2O2 as cathode material for lithium ion batteries

“…78.25% of reversible capacity can be retained in this sample at the end of the 45th cycle. This result was fairly similar to the result reported previously [1,2].…”

“…Kim [2] reported the results of synthesised LiNi 0.4 Mn 0.4 Co 0.2 O 2 by a combustion method. The optimum condition to obtain the best electrochemical properties was at a temperature of 750°C for 24 h. This composition exhibits an initial charge and discharge capacity of 181.4 and 159.5 mAh g −1 after the 1st and 20th cycles in the voltage region between 3.0 and 4.6 V. Bie [3] has reinvestigated the same composition by using a co-precipitate method and came out with a lower degree of Li + /Ni 2+ cation disorder (3.64%) compared to previous the results (4.4%) reported by Ma [4].…”

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

“…In particular, complementary heterostructure field-effect transistors (HFETs) are promise for the requirement of logic circuit applications with low standby power consumption [12,13]. But, the performance of complementary HFETs was limited by the p-channel transistor with low transconductance caused by the low hole mobility.…”

Study of optical heterodyne mixing characteristics in an A1InAs/GaInAs transferred‐substrate double heterojunction bipolar transistor

“…The photo-response characteristics of phototransistors, microwave transistors optimized for detecting high-frequency modulated optical signals, have been studied extensively by many researchers [1][2][3], because they can be used as wide-bandwidth photodetectors in ultrahigh-speed optical communication systems and mm-wave or microwave-photonics systems [4]. InP-based phototransistors are the most attractive devices because both optical-detector and electronic devices can be integrated into a monolithic integrated circuit.…”

“…This requirement can easily exceed the resources of the most powerful computers available in the market. To overcome this problem, the precorrected fast Fourier transform (P-FFT) method has been, therefore, used to speed up the MoM solution of large-scaled electromagnetic scattering and radiation problems in our previous work [1][2][3]. The P-FFT method uses irregular meshes to model the scatterers and then projects the irregular sub-domain basis functions onto a uniform grid.…”