Optical Spectroscopy of Mg- and C-Related Donor and Acceptor Levels in GaN Grown by MBE

Strauf, Stefan; Michler, Peter; Gutowski, J.; Birkle, U.; Fehrer, M.; Einfeldt, S.; Hommel, D.

doi:10.1002/(sici)1521-3951(199911)216:1<557::aid-pssb557>3.0.co;2-4

Cited by 4 publications

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“…With increasing excitation density the DAP zero-phonon-line maximum shifts by about 20 meV to higher energies because of the increasing dominance of close pairs (compare, e.g., Fig. 2 in [6]). Fig.…”

Section: Resultsmentioning

confidence: 94%

“…With a fixed set of five parameters the decay characteristics of all energies between 3.233 and 3.306 eV can perfectly be reproduced. The bandgap for this sample has been fixed to 3.504 eV as measured by photoreflectance [6]. E A is fixed to 245 meV as estimated from the corresponding free-to-bound transition of the Mg acceptor at higher temperatures already shown in [7].…”

Section: Resultsmentioning

confidence: 99%

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Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg

Strauf

Ulrich

Michler

et al. 2001

phys. stat. sol. (b)

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We have investigated the dynamics of the donor-acceptor-pair (DAP) recombination in Mg-doped GaN layers grown by MOVPE as well as MBE. The observed nonexponential decay curves are perfectly described if all parallel decay channels for each donor impurity surrounded by the acceptor impurities are included. Best fits have been obtained with a donor binding energy of 32 AE 2 meV. Additionally, under resonant excitation of the donor-bound-exciton complex the excited state of the donor could be clearly identified. From these data a donor binding energy of 29:9 AE 1:0 meV has been estimated, in good agreement with the value obtained from the DAP decay. We emphasize that the analysis of the DAP decay yields an accurate estimate for the neutral acceptor concentration in GaN : Mg without any need for further electrical measurements.

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Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%