Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon

Abstract

Results are presented on the photoluminescence (PL) characterization of heavily doped p + Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p + material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscopy results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon.

Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates

“…A wide variety of photoluminescence (PL) signals have been associated with oxygen-related defects in silicon. 3,[14][15][16][17][18][19][20][21][22] At room temperature, oxide precipitates give rise to a broad PL peak at $0.8 eV. 3,16,18 At first glance, this could be attributed to dislocation-related PL Dlines found at liquid helium temperatures, 23 but Tajima et al have used microscopic PL mapping to show this defect band is instead associated with oxygen precipitation.…”

Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy

“…Methods like GFA or secondary ion mass spectroscopy (SIMS) allow to determine the total oxygen concentration, and are not suited to observe oxygen precipitation. Alternative measurement methods for the precipitated oxygen like photoluminescence [1] and X-ray diffraction [2] were shown. But these methods give no direct access to the Oi.…”