Optical stability of shape-engineered InAs/InAlGaAs quantum dots

Yang, Youngsin; Jo, Byounggu; Kim, Jaesu; Lee, Cheul-Ro; Oh, Dae Kon; Kim, Jong Su; Leem, Jae‐Young

doi:10.1063/1.3039086

Cited by 10 publications

(2 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7(c), were 85 meV at 1.55 µm, and 35 meV at 1.5 µm, respectively, with the latter one among one of the best inhomogeneous broadening value obtained at room temperature on InAs/InP Qdots. The optical stability [43] and the effects of group III elements on the growth kinetics of AGQDs were also investigated via utilization of 1 ML InAs and GaAs layers instead of InGaAlAs layer during the growth of InAs Qdots on (100) InP substrate [44].…”

Section: Qdots On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

View full text Add to dashboard Cite

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

show abstract

Section: Qdots On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

View full text Add to dashboard Cite

show abstract

“…6) was achieved. These dots exhibit the narrowest linewidth for 1.55 mm emitting structure based on self-assembled QDs [9,14].…”

Section: Resultsmentioning

confidence: 99%

High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity

Banyoudeh

Reithmaier

2015

Journal of Crystal Growth

View full text Add to dashboard Cite

Temperature-Independent Performance of an 8-Layer λ ~1.3 μm InAs/GaAs Quantum-Dot Laser

et al. 2020

View full text Add to dashboard Cite

Optical stability of shape-engineered InAs/InAlGaAs quantum dots

Abstract: Mechanism for improvements of optical properties of 1.3-μ m InAs ∕ GaAs quantum dots by a combined InAlAs -InGaAs cap layer J. Appl. Phys. 98, 083516 (2005); 10.1063/1.2113408 Temperature stabilized 1.55 μ m photoluminescence in InAs quantum dots grown on InAlGaAs/InP

Cited by 10 publications

References 18 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

High-density 1.54 μm InAs/InGaAlAs/InP(100) based quantum dots with reduced size inhomogeneity

Temperature-Independent Performance of an 8-Layer λ ~1.3 μm InAs/GaAs Quantum-Dot Laser

Contact Info

Product

Resources

About