Optical studies of nitrogen plasma for molecular beam epitaxy of InN

Abstract

We report on the optical characterization of a nitrogen plasma source based on radiofrequency (RF) used to grow III-nitride materials by molecular beam epitaxy (MBE). Optical emission spectroscopy (OES) was used to study the nitrogen plasma response as a function of the RF power applied and the flow rate of molecular nitrogen. Analysis of the intensities of spectral signals assigned to atomic and molecular species and the ratio of these intensities is performed in detail. The OES results show that the plasma source studied is sensitive to the RF power applied to produce an atomic nitrogen signal, while varying the incoming flow impacts the signal of metastable nitrogen molecules; this outcome allows for the determination of conditions under which certain types of nitrogen species are favored over others. InN films were grown on AlN-buffered Si(111) substrates by MBE under different plasma operational parameters, where, according to the OES studies, atomic nitrogen or excited molecular nitrogen is favored in the plasma. In situ reflection high-energy electron diffraction, scanning electron microscopy, and x-ray diffraction techniques were employed to characterize the InN samples. It is found that the surface morphology of the InN films is highly sensitive to the plasma conditions. A transition in the growth mode from smooth compact films to coalesced islands and columnar structures is observed when the dominant reactive species is atomic nitrogen or excited molecular nitrogen. The results of the characterization are discussed and correlated with the reactive nitrogen species present in the plasma.

Control of the formation of self-assembled nano-voids at the GaN/GaAs interface

“…The experiments were carried out in a conventional MBE system equipped with Knudsen cells for Ga, Al and As, and an RF-plasma source for reactive nitrogen production. 17) Details concerning GaN growth over GaAs substrates with (100) nominal orientation (flat substrates) have been reported elsewhere. 18) For the present work we employed GaAs(100) substrates misoriented 10°towards the [011] direction [GaAs (100)-10°].…”