Optical study of GaAs/GaAlAs quantum structures processed by high energy focused ion beam implantation

Focused ion beam patterning of III–V crystals at low temperature: A method for improving the ion-induced defect localization

“…Longitudinally, channeling was first proposed for FIB defect generation deeply in the structures. 5,6 Indeed damage penetration was found to be one order of magnitude deeper than what could be expected from classical calculation in amorphous media. These results were confirmed with a large variety of incident ion species and ion energy.…”

Exploration of the ultimate patterning potential achievable with focused ion beams

“…This was especially true and limiting with materials very sensitive to ion-induced defects, like III-V compounds. Numerous experimental results were found to converge towards the demonstration that ion damage penetrates much deeper than was expected from classical collision calculations [5]. Similarly, a lack of lateral selectivity for FIB direct patterning processes has been also evidenced laterally [6].…”

Exploration of the ultimate patterning potential achievable with focused ion beams

“…This was especially true and limiting with materials very sensitive to ion-induced defects, like III-V compounds. Numerous experimental results were found to converge towards the demonstration that the ion damage penetrates much deeper than that was expected from classical collision calculations [7]. Similarly, a lack of lateral selectivity for FIB direct patterning processes has been also evidenced [8].…”