2006
DOI: 10.1088/1464-4258/8/11/009
|View full text |Cite
|
Sign up to set email alerts
|

Optical switching in a resonant Fabry–Perot saturable absorber

Abstract: We experimentally demonstrate optical switching in a Fabry-Perot saturable absorber using a pump-probe technique. The saturable absorbers are multiple quantum wells, 35 and 42 pairs of alternating layers of 7 nm thick compressively strained Ga 0.42 In 0.58 AsP. These quantum wells are separated by 8 nm thick InP barriers. The reflectivity of these samples as a function of the input optical power is theoretically and experimentally investigated. A switching rate of better than 20 MHz is observed. This optical s… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

1
8
0

Year Published

2009
2009
2020
2020

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 14 publications
(9 citation statements)
references
References 16 publications
1
8
0
Order By: Relevance
“…[15] where NAND/NOR logic operations are simulated in reflective VCSSA without considering nonlinear index change property, we simulate the above logic operations with due consideration of dispersive nonlinearity and thermal effects. We show that our simulation supports the experimental observations reported elsewhere [18,19] better than Ref. [15].…”
Section: Introductionsupporting
confidence: 91%
See 2 more Smart Citations
“…[15] where NAND/NOR logic operations are simulated in reflective VCSSA without considering nonlinear index change property, we simulate the above logic operations with due consideration of dispersive nonlinearity and thermal effects. We show that our simulation supports the experimental observations reported elsewhere [18,19] better than Ref. [15].…”
Section: Introductionsupporting
confidence: 91%
“…[19], R th = 1000 K/W, A = 20 μm 2 , d = 0.5 μm and ρ = 1 for cw input are considered for InGaAs/InP quantum wells. The experimental results on resonance wavelength shifting are reported for In 0.58 Ga 0.42 AsP/InP in [18] and for InGaAs/InAlAs quantum wells in Ref. [19].…”
Section: Wavelength Shift Due To Influence Of Thermal Effectsmentioning
confidence: 96%
See 1 more Smart Citation
“…The considered embedded materials in the F-P cavity either have absorption saturation property or saturating nonlinearity in index change. A F-P cavity embedded with quantum wells (QWs) material [1][2][3] is known as vertical cavity semiconductor saturable absorber. Its applications are in all-optical switching systems [1], dual wavelength conversion [2], AND/OR [4] and NAND/NOR logic operations [5], and signal processing.…”
Section: Introductionmentioning
confidence: 99%
“…In the past few years, study has also been pursued on passive vertical cavity devices like a reflective vertical cavity semiconductor saturable absorber (VCSSA) consisting of a Fabry-Pérot cavity embedded with quantum wells (QWs) material [7][8][9], the schematic of which is shown in Fig. 1.…”
Section: Introductionmentioning
confidence: 99%