Optical Transitions from Core d Levels of Gallium Arsenide

Unveiling Variations in Electronic and Atomic Structures Due to Nanoscale Wurtzite and Zinc Blende Phase Separation in GaAs Nanowires

“…Figure a shows the Ga-M 4,5 EELS edges of the ZB and WZ phases in the nanowire with edge onsets at around 20 eV. Because of the flatness of the core levels, the energy loss near edge fine structure (ELNES) in the spectra is essentially determined by the DOS close to the bottom of the conduction bands. − The Ga-M 4,5 onset in the WZ phase is shifted slightly to lower energy, by ∼70 meV, compared with that in the ZB lattice (Figure a). Apart from the relative shift of the spectra, the ELNES from the two phases shows similar general features but with subtle differences.…”