Optical waveguiding properties of lead titanate thin films grown on quartz by pulsed-laser deposition

Essahlaoui, A.; Roemer, Anne; Boudrioua, Azzedine; Millon, Éric; Loulergue, J. C.

doi:10.1016/s0925-3467(03)00029-6

Cited by 11 publications

(5 citation statements)

References 21 publications

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“…The coefficient difference of absorption with wavelength, when the wavelength is increased, the absorption coefficient decreases. The equation used to calculate visual absorption was [20,21]. (2…”

Section: Resultsmentioning

confidence: 99%

Optical Properties of GaAs Nanoparticles in Acetone by Laser Ablation

Rawas

Slewa

Hamam

et al. 2023

SSP

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Gallium arsenide (GaAs) nanoparticles' optical and emission properties can be tuned bychanging their size across the visible spectrum. GaAs nanoparticles' optical characteristics aredegraded by oxidation on their surface. This work investigated the optical constants and the opticalband gap for a GaAs nanoparticle immersed in acetone using the laser ablation into liquids (LAL)technique after being exposed to a Nd: YAG pulsed laser operating at the wavelength (1064nm)10Hz frequency, and 7ns pulse width for a fixed flounce of 1.32 J/cm2, and the time of ablationwas 5 minutes. In order to calculate the optical conductivity (σ), refractive index (n), extinctioncoefficient (k), dielectric constant, absorption coefficient (α), and optical band gap, an opticalinvestigation was carried out utilizing a UV-Visible Spectrophotometer region in the wavelengthrange 300-1200 nm. The band gap energy was determined to be 3.8 eV, which is greater than thebulk Ga energy. The band gap energy of nanoparticles increases with increasing laser pulse energyand decreases with increasing pulse repetition rate. Transmission spectra increased as wavelengthsincreased, while optical absorption coefficients, extinction coefficients, and refractive coefficientsdecreased. The difference in optical constants is explained by defect states and the average bandenergy of the system. The acetone stability test reveals a peak at -0.69 mV, indicating low stabilityin nanoparticles.

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Section: Resultsmentioning

confidence: 99%

Optical Properties of GaAs Nanoparticles in Acetone by Laser Ablation

Rawas

Slewa

Hamam

et al. 2023

SSP

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“…The PbTiO3 target is a commercial hot pressed ceramic (Inland Europe, Praxair surface technologies, purity 99.99 %). Oxygen pressure influences the static oxidation processes of the growing thin films and control the relative stability of the oxygened species in the plasma while the temperature is an important parameter for obtaining the stoichiometric PT films with a purely perovskite structure [19][20][21].…”

Section: Sample Preparationmentioning

confidence: 99%

Calculation of the thickness and optical constants of lead titanate thin films grown on MgO from their transmission spectra

Essahlaoui¹,

Essaoudi²,

Hallaoui³

et al. 2018

jmes

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“…The large value of the remanent polarization evidences that the MBE-grown PZT films show a great promise for device applications. pyroelectric infrared sensors , nonvolatile memory , optical waveguide devices, 38 and electro-optic modulators. 39 The integration of these perovskite oxides with existing semiconductors such as GaN is of particular interest which makes use of intrinsic characteristics of ferroelectric thin films, in the form, e.g,.…”

Section: Conclusion For Pztmentioning

confidence: 99%

Synthesis of Multifunctional Materials

Morkoç¹

2006

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintainin_ the data needed, and completing and reviewing this collection of Information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and Single-crystal PbTiO 3 layers were grown on (001) SrTiO 3 substrates by molecular beam epitaxy using hydrogen peroxide as an oxidant. Phase composition and structural properties of the films were examined as a function of growth parameters. It was found that single-phase PbTiO 3 films grew epitaxially at substrate temperatures of 600'C and higher, whereas layers grown at lower temperature contained PbO inclusions.Growth of Pb(ZrxTi 1 ..)0 3 (PZT) films by molecular beam epitaxy was demonstrated for the first time. Single-crystal, single-phase PZT films were grown on (001) SrTiO 3 substrates at a growth temperature of 600'C. In situ monitoring of the growth process by reflection high-energy electron diffraction revealed two dimensional growth mode for the end compounds of the PZT system, PbTiO 3 and PbZrO 3 , and three-dimensional growth mode for PZT films of intermediate compositions.Epitaxial growth of PbO, TiO 2 and ZrO 2 has been achieved on MOCVD grown GaN template using oxides MBE with a reactive H 2 0 2 oxygen source. In situ RHEED was used to monitor the growth in-situ. AFM was used to characterize the surface morphology of the thin PbO and ZrO 2 , which show streaky, 2-D RHEED patterns.We have made substantial progress in the growth and characterization of PTO and PZT and also on ZrO 2 which turned out to be a very good oxide bridge layer to GaN. 20061226006ABSTRACT Single-crystal PbTiO 3 layers were grown on (001) SrTiO 3 substrates by molecular beam epitaxy using hydrogen peroxide as an oxidant. Phase composition and structural properties of the films were examined as a function of growth parameters. It was found that single-phase PbTiO 3 films grew epitaxially at substrate temperatures of 600'C and higher, whereas layers grown at lower temperature contained PbO inclusions. The epitaxial relationship between the films and the substrates was (001)PbTiO 3 //(001)SrTiO 3 and PbTiO 3 [100]//SrTiO 3 [100]. No evidence of a-domains was found. Full widths at half maximum of (001) PbTiO 3 rocking curves were as low as 6-8 arcmin for 50-60 nm thick films, indicating high crystal quality of the films. From ellipsometric measurements, refractive index and band gap of PbTiO 3 were found to be 2.66 at 633 nm and 3.8 eV, respectively.

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Optical waveguiding properties of lead titanate thin films grown on quartz by pulsed-laser deposition

Cited by 11 publications

References 21 publications

Optical Properties of GaAs Nanoparticles in Acetone by Laser Ablation

Optical Properties of GaAs Nanoparticles in Acetone by Laser Ablation

Calculation of the thickness and optical constants of lead titanate thin films grown on MgO from their transmission spectra

Synthesis of Multifunctional Materials

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