2019
DOI: 10.1364/oe.27.011930
|View full text |Cite
|
Sign up to set email alerts
|

Optical wireless APD receivers in 035 µm HV CMOS technology with large detection area

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

1
8
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
5
1

Relationship

1
5

Authors

Journals

citations
Cited by 10 publications
(9 citation statements)
references
References 15 publications
1
8
0
Order By: Relevance
“…Prior to background light variation, the transmitter was placed at the distance of 25 m where BER value was lower than 10 -9 to top the signal above the initial error-free margin. At this distance the BER level was comparable to the BER levels in our previous studies [22], [31], [32] when also the influence of the background illuminance was measured. The BER dependence on the illuminance levels of the adjustable background light sources is shown in Fig.…”
Section: Background Light Interferencesupporting
confidence: 84%
See 1 more Smart Citation
“…Prior to background light variation, the transmitter was placed at the distance of 25 m where BER value was lower than 10 -9 to top the signal above the initial error-free margin. At this distance the BER level was comparable to the BER levels in our previous studies [22], [31], [32] when also the influence of the background illuminance was measured. The BER dependence on the illuminance levels of the adjustable background light sources is shown in Fig.…”
Section: Background Light Interferencesupporting
confidence: 84%
“…The generated dc background photocurrent is a source of shot noise which is very detrimental to APD receivers since it is amplified by the internal APD gain together with the signal. In [22], the optical spectrum of the artificial light sources measured with an AvaSoft spectrometer is given; additionally, for reference, a lab lighting spectrum is also provided. The lab lighting has a fluorescent spectrum which is commonly found in indoor facilities, especially industrial ones [33].…”
Section: Background Light Interferencementioning
confidence: 99%
“…The thickness of this intrinsic absorption zone was about 10 µm. The breakdown voltage of this pin-photodiode-(Bi)CMOS APD was about 35 V. Another possibility to obtain a thick absorption zone in a high-voltage (HV) CMOS technology was the partial compensation of the doping concentration of a deep p-well and of the p epitaxial layer, by implementation of an additional deep n-well [31] (see Figure 1b). The breakdown voltage of this HV-CMOS APD was about 68 V, which is, however, well within the isolation capability of the transistors of 100 V in this process.…”
Section: Integrated Apd Receiversmentioning
confidence: 99%
“…It should be mentioned that, with error correction (BER = 2 × 10 −3 ), the sensitivity improves by about 6 dB to −35.3 dBm at 2 Gb/s and by 5.5 dB to −38.5 dBm at 1 Gb/s [30]. Receivers with the HV-APD were realized with APD diameters of 200 and 400 µm and showed for 675 nm, 1 Gb/s, BER = 10 −9 , and PRBS31 sensitivities of −35.5 and −34.7 dBm [31], respectively.…”
Section: Integrated Apd Receiversmentioning
confidence: 99%
“…There has been some work on optimizing receivers for OW. In a work reported in [84] low capacitance detectors were grown and combined with CMOS preamplifiers design to be tolerant to high-input capacitance, and in [85][86][87] high data-rate designs have been pursued. Integrated transceivers and high-speed transimpedance amplifiers are also reported in [88][89][90].…”
Section: Receiversmentioning
confidence: 99%