Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

Abstract

A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator. This paper discusses the electric field distribution, spectral response and transient response of the device. Due to utilizing p-SiCGe charge-compensation layer, the responsivity increases nearly two times and breakdown voltage increases 33%. The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time. With an increase of the light power density and wavelength, the rise time and fall time will become shorter and longer, respectively. In terms of carrier lifetime, a compromise should be made between the responsivity and switching speed, the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns.

A simple and accurate method for measuring program/erase speed in a memory capacitor structure

“…So, quickly forming enough minority carriers in the channel in the inversion regime is indispensable to correctly measure the minority carrier-related program/erase speed in a memory capacitor structure. In order to enhance the minority carrier generation rate in a memory capacitor, illumination [9,10] is employed during the P/E transient measurement. Figure 2 presents a scheme to measure erase transient characteristics for a p-channel memory capacitor under illumination.…”

Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunctions

“…[15] This is perhaps because that the SiCGe or Si material has a low optical absorption coefficient and the presence of interface traps can seriously degrade the characteristics of PDs. [16] As we have proposed, a promising way to solve this problem is to adopt a β -FeSi 2 /4H-SiC pn heterojunction structure, in which the p-type β -FeSi 2 is used as a light-absorption layer due to its higher optical absorption coefficient, and is grown on a n + -type 4H-SiC substrate covered with a thin layer of n-type 4H-SiC epilayer. Up to now, there is only one report of the growth of epitaxial β -FeSi 2 thin film on a 3C-SiC buffer layer on a Si substrate.…”