Optically induced voltage pulses by resonant excitation of a passive GaAs photoconductive switch

Loata, G.; Bieler, Mark; Hein, G.; Siegner, U.

doi:10.1364/josab.25.001261

Cited by 5 publications

(4 citation statements)

References 18 publications

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“…Bulk polarization is not required; only inversion symmetry must be broken. Shift currents have been investigated experimentally [19,[27][28][29][30][31][32][33][34], analytically [20,23,[35][36][37], and computationally, although only for a few nonpolar materials [23][24][25]. Perturbative analysis treating the electromagnetic field classically yields the shift current expression [20,23] J q ¼ rsq E r E s rsq ð!Þ ¼ e e m@!…”

Section: First Principles Calculation Of the Shift Current Photovoltamentioning

confidence: 99%

First Principles Calculation of the Shift Current Photovoltaic Effect in Ferroelectrics

2012

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We calculate the bulk photovoltaic response of the ferroelectrics BaTiO 3 and PbTiO 3 from first principles by applying "shift current" theory to the electronic structure from density functional theory. The first principles results for BaTiO 3 reproduce eperimental photocurrent direction and magnitude as a function of light frequency, as well as the dependence of current on light polarization, demonstrating that shift current is the dominant mechanism of the bulk photovoltaic effect in BaTiO 3 . Additionally, we analyze the relationship between response and material properties in detail. The photocurrent does not depend simply or strongly on the magnitude of material polarization, as has been previously assumed; instead, electronic states with delocalized, covalent bonding that is highly asymmetric along the current direction are required for strong shift current enhancements. The complexity of the response dependence on both external and material parameters suggests applications not only in solar energy conversion, but to photocatalysis and sensor and switch type devices as well.

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Section: First Principles Calculation Of the Shift Current Photovoltamentioning

confidence: 99%

First Principles Calculation of the Shift Current Photovoltaic Effect in Ferroelectrics

2012

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“…In essence, the model expression for j L of [21,22] is considered as omnipotent one for the linear BPVE. Referring to [3,4,21,22], numerous experimental papers [23][24][25][26][27][28][29] claim for observation and employment of the shift currents.…”

Section: Introductorymentioning

confidence: 99%

Ballistic and shift currents in the bulk photovoltaic effect theory

Sturman¹

2020

Phys.-Usp.

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The bulk photovoltaic effect (BPVE) -generation of electric currents by light in noncentrosymmetric materials in the absence of electric fields and gradients -has been intensively investigated in the end of the last century. The outcomes including all main aspects of this phenomenon were summarized in review and books. A new upsurge of interest to the BPVE occurred recently and resulted in a flux of misleading theoretical and experimental publications centered around the so-called shift current. Numerous top-rated recent publications ignore the basic principles of charge-transport phenomena and the previous results of joined experimental-theoretical studies. Specifically, dominating (or substantial) contributions to the currents caused by asymmetry of the momentum distributions of electrons and holes are missed. The widespread starting relation for the shift current, originating from the quadratic nonlinear response theory and pretending to be omnipotent, is in fact incomplete. It ignores kinetic processes of relaxation and recombination of photo-excited electrons and leads to non-vanishing shift currents in thermal equilibrium. The goals of this methodical note is to specify and argue the benchmarks of the BPVE theory and return the studies on the right track in the interest of development of photovoltaic devices.

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“…17 − 20 Both first-principle calculations and experimental studies have helped reveal substantial information, leading to a considerably good understanding of the occurrence of SCs in materials. 21 − 24 As a matter of fact, findings of many studies on SCs have led their current status, where they are strongly being considered as an alternative to the photocurrents generated by traditional semiconductor p–n junctions for photovoltaic applications. 25 , 26 It is now well established that SCs are generated in homogeneous materials in contrast to standard semiconductor solar cells whose active region is a heterogeneous pn junction.…”

Section: Introductionmentioning

confidence: 99%

“…Although SCs were studied way back in the early 1960s, they have recently gained greater attention in part due to their potential application in efficient solar cells design and their recent observations in Weyl semimetals and topological insulators. − Both first-principle calculations and experimental studies have helped reveal substantial information, leading to a considerably good understanding of the occurrence of SCs in materials. − As a matter of fact, findings of many studies on SCs have led their current status, where they are strongly being considered as an alternative to the photocurrents generated by traditional semiconductor p–n junctions for photovoltaic applications. , It is now well established that SCs are generated in homogeneous materials in contrast to standard semiconductor solar cells whose active region is a heterogeneous pn junction . It has also been demonstrated that in SCs, charge carriers rapidly propagate to electrodes as a result of the coherent evolution of electron and hole wavefunctions, thus minimizing the probabilities of energy losses.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Shift Currents in Monolayer 2D GeS and SnS by Strain-Induced Band Gap Engineering

et al. 2020

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Group IV monochalcogenides exhibit spontaneous polarization and ferroelectricity, which are important in photovoltaic materials. Since strain engineering plays an important role in ferroelectricity, in the present work, the effect of equibiaxial strain on the band structure and shift currents in monolayer two-dimensional (2D) GeS and SnS has systematically been investigated using the first-principles calculations. The conduction bands of those materials are more responsive to strain than the valence bands. Increased equibiaxial compressive strain leads to a drastic reduction in the band gap and finally the occurrence of phase transition from semiconductor to metal at strains of −15 and −14% for GeS and SnS, respectively. On the other hand, tensile equibiaxial strain increases the band gap slightly. Similarly, increased equibiaxial compressive strain leads to a steady almost four times increase in the shift currents at a strain of −12% with direction change occurring at −8% strain. However, at phase transition from semiconductor to metal, the shift currents of the two materials completely vanish. Equibiaxial tensile strain also leads to increased shift currents. For SnS, shift currents do not change direction, just as the case of GeS at low strain; however, at a strain of +8% and beyond, direction reversal of shift currents beyond the band gap in GeS occur.

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Optically induced voltage pulses by resonant excitation of a passive GaAs photoconductive switch

Cited by 5 publications

References 18 publications

First Principles Calculation of the Shift Current Photovoltaic Effect in Ferroelectrics

First Principles Calculation of the Shift Current Photovoltaic Effect in Ferroelectrics

Ballistic and shift currents in the bulk photovoltaic effect theory

Enhanced Shift Currents in Monolayer 2D GeS and SnS by Strain-Induced Band Gap Engineering

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