“…Recently there has been great interest in antiferromagnetic materials for their use in energy efficient computing [1][2][3][4] and neuromorphic hardware [5,6] with the potential for terahertz operating frequencies, lower thermal losses, and enhanced on-chip packing density. [7][8][9][10] In particular, noncollinear antiferromagnets (AFMs) such as Mn 3 A (A = Sn, Ge, Pt) and Mn 3 AN (A = Ni, Ga, Sn) have been shown to possess intrinsic anomalous Hall effect (AHE), [11][12][13][14][15][16][17] magneto-optical Kerr effect (MOKE), [18][19][20] anomalous Nernst effect (ANE), [21][22][23] and the tunneling magnetoresistance effect [24] which allows for easy readout of the antiferromagnetic state, an obstacle for many collinear antiferromagnetic families, [25][26][27] although encouraging progress with altermagnets may help overcome this bottleneck. [28][29][30][31] Although it is theoretically understood that the AHE may be observed in fully compensated noncollinear AFM with M = 0, [32][33][34][35] experimentally the observation of the anomalous Hall effect in noncollinear AFM systems is accompanied with a small net moment.…”