Optimal Design of Co/In/Cu Sputtering Target Assembly Using Finite Element Method and Taguchi Method

Abstract

Target assembly is a key consumable material for producing thin film used in the electronic packaging and devices. The residual stresses induced during the process of soldering are detrimental to the performance of target assembly. In this work, the intensity and distribution of the soldering residual stress of Co/In/Cu target assembly subjected to a 20 W/(m 2 K) cooling condition corresponding to the actual air cooling process were studied, based on finite element simulation and Taguchi method, to optimize the sputtering target assembly. Effects of different control factors, including solder material, thickness of solder layer, target and backing plate, on the soldering residual stress of target assembly are investigated. The maximum residual stress is calculated as 9.28 MPa in the target located at 0.16 mm from target-solder layer interface and at a distance of 0.78 mm from symmetry axis. The optimal design in target assembly has the combination of indium solder material, cobalt target at 12 mm thick, solder layer at 0.8 mm thick, copper backing plate at 15 mm thick. Moreover, solder material is the most important factor among control factors in the target assembly.

Design Optimization of Pillar Bump Structure for Minimizing the Stress in Brittle Low K Dielectric Material Layer

“…As the stress in various field is not easy to be measured experimentally, finite element analysis (FEA) is becoming a good alternative method to simulate the stress and guide the structure and process optimization for lower stress, and so does the semiconductor packaging field [15][16][17][18]. With this tool, numerous options can be used to optimize the stress of the flip chip package.…”

Effect of harmonic magnetic field and pulse magnetic field on microstructure of high purity Cu during electromagnetic direct chill casting

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With the rapid development of very large-scale integration (VLSI) and flat panel display (FPD), the demands for sputtering target materials with high purity are greatly increased [1] . High purity Cu is one of the most commonly used metals for sputtering target [2] .Generally, the sputtering rate, deposited film quality and thickness uniformity are high when using a target with fine grains and small grain size difference [3] . Therefore,

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“…With the rapid development of very large-scale integration (VLSI) and flat panel display (FPD), the demands for sputtering target materials with high purity are greatly increased [1] . High purity Cu is one of the most commonly used metals for sputtering target [2] .…”