The temperature resonance of the scattering coefficient of the minority charge carriers is applied to the determination of the optimum thickness of an (p) base (n + /p /p + ) bifacial silicon solar cell, placed under magnetic field, and illuminated by the back side (p + ) by a monochromatic light with constant flux, of short wavelength. The optimum thickness is obtained by the graphical method of the representation as a function of the thickness, expressions of minority carriers' recombination velocity on the rear side of the base, depending on both the diffusion coefficient and the absorption coefficient. The results show a reduction in the thickness of the base, making it possible to obtain an optimal photocurrent, and a saving of material for the industrial elaboration of solar cells.