Optimisation of ZnO:Al films by change of sputter gas pressure for solar cell application

Song, Dengyuan; Aberle, Armin G.; Xia, J.

doi:10.1016/s0169-4332(02)00611-6

Cited by 227 publications

(99 citation statements)

References 12 publications

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“…Therefore, the change in resistivity with EB Al2O3 is ascribed to the change in carrier concentration and Hall mobility. These values are comparable to that of the reported AZO films prepared by EB-PVD, 3),4) sputtering, 7) and PLD.…”

Section: Resultssupporting

confidence: 89%

“…Deposition rate in this study was about 0.67 to 0.91 nm/s. These values are comparable to that of sputtering, 7) and faster than that of the reported AZO films prepared by EB-PVD 2),3) and PLD. 9),10) Using our EB-PVD equipment, higher deposition rate could be achieved by decreasing the distance between substrateevaporation source and/or increasing EB power.…”

Section: Resultssupporting

confidence: 83%

“…Highest IR-reflectance was obtained at the EB Al2O3 of 7.5 kW, up to 73% at 2500 nm [ Fig. 5(b)], which is much higher than that of reported films by EB-PVD 3) and comparable with that of reported films by sputtering 7) and PLD. 8),9) The near-IR reflectance behavior of AZO film can be explained by the classical Drude theory.…”

Section: )10)supporting

confidence: 60%

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Properties of Al doped zinc oxide films prepared by electron beam-PVD

Yamaguchi

Kuroyama

Okuhara

et al. 2013

J. Ceram. Soc. Japan

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Al doped ZnO (AZO) films were prepared on quartz substrates by the co-evaporation of ZnO and Al 2 O 3 by EB-PVD. Structural, optical and electrical properties of AZO films were investigated, focusing on the effect of the electron beam power applied to the Al 2 O 3 ingot. X-ray diffraction measurement showed that the AZO films were highly c-axis oriented. Transmittance of all the AZO films was over 85% in the visible range. The highest reflectance in the near IR range was obtained at the EB power on Al 2 O 3 of 7.5 kW, 73% at 2500 nm. The lowest resistivity of 2.34 © 10 ¹4 ³cm was obtained for the film deposited with the EB power on Al 2 O 3 of 7.5 kW.

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Section: Resultssupporting

confidence: 89%

Section: Resultssupporting

confidence: 83%

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Properties of Al doped zinc oxide films prepared by electron beam-PVD

Yamaguchi

Kuroyama

Okuhara

et al. 2013

J. Ceram. Soc. Japan

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“…Transparent and conductive films (TCF) are widely utilized in a variety of photosensitive electronic devices, such as solar cells, touch screens, flat panel displays, and light-emitting diodes [1][2][3][4]. TCFs exhibit high transmittance in the visible region and have low resistivity and other characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…TCFs exhibit high transmittance in the visible region and have low resistivity and other characteristics. Among the existing TCFs, tin-doped indium oxide (ITO) and aluminum-doped zinc oxide (AZO) are some of the most popular TCFs [2][3][4][5]. However, some applications require higher performances, such as lower resistance, higher flexibility and long-term durability.…”

Section: Introductionmentioning

confidence: 99%